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ONET8551T

現行

具 RSSI 的 11.3-Gbps 限幅互阻抗放大器

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產品規格表

ONET8551T

現行
產品規格表 立即訂購

產品詳細資料

Type Transimpedance and limiting amplifier Data rate (max) (Mbps) 11300 Supply current (typ) (µA) 28000 Supply current (max) (µA) 40000 Deterministic jitter (typ) (ps) 6 Operating temperature range (°C) -40 to 100
Type Transimpedance and limiting amplifier Data rate (max) (Mbps) 11300 Supply current (typ) (µA) 28000 Supply current (max) (µA) 40000 Deterministic jitter (typ) (ps) 6 Operating temperature range (°C) -40 to 100
DIESALE (Y) — See data sheet WAFERSALE (YS) — See data sheet
  • 9-GHz Bandwidth
  • 10-kΩ Differential Small Signal
    Transimpedance
  • –20-dBm Sensitivity
  • 0.9-µARMS Input Referred Noise
  • 2.5-mAp-p Input Overload Current
  • Received Signal Strength Indication
    (RSSI)
  • 92-mW Typical Power Dissipation
  • CML Data Outputs With On-Chip
    50-Ω Back-Termination
  • On Chip Supply Filter Capacitor
  • Single +3.3-V Supply
  • Die Size: 870 µm x 1036 µm
  • 9-GHz Bandwidth
  • 10-kΩ Differential Small Signal
    Transimpedance
  • –20-dBm Sensitivity
  • 0.9-µARMS Input Referred Noise
  • 2.5-mAp-p Input Overload Current
  • Received Signal Strength Indication
    (RSSI)
  • 92-mW Typical Power Dissipation
  • CML Data Outputs With On-Chip
    50-Ω Back-Termination
  • On Chip Supply Filter Capacitor
  • Single +3.3-V Supply
  • Die Size: 870 µm x 1036 µm

The ONET8551T device is a high-speed, high-gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features low-input referred noise, 9-GHz bandwidth, 10-kΩ small signal transimpedance, and a received signal strength indicator (RSSI.

The ONET8551T device is available in die form, includes an on-chip VCC bypass capacitor, and is optimized for packaging in a TO can.

The ONET8551T device requires a single +3.3-V supply. The power-efficient design typically dissipates less than 95 mW. The device is characterized for operation from –40°C to 100°C case (IC back-side) temperature.

The ONET8551T device is a high-speed, high-gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features low-input referred noise, 9-GHz bandwidth, 10-kΩ small signal transimpedance, and a received signal strength indicator (RSSI.

The ONET8551T device is available in die form, includes an on-chip VCC bypass capacitor, and is optimized for packaging in a TO can.

The ONET8551T device requires a single +3.3-V supply. The power-efficient design typically dissipates less than 95 mW. The device is characterized for operation from –40°C to 100°C case (IC back-side) temperature.
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類型 標題 日期
* Data sheet 11.3 Gbps Limiting Transimpedance Amplifier With RSSI, ONET8551T datasheet 2013年 10月 24日

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TIDA-00088 — 適用於 TI ONET 零件的完整參考設計，採用相容於 10G SFP+ LR 光學模組的形狀

This Texas Instruments Reference Design was designed to demonstrate the optical performance of the ONET1151L Laser Driver, the ONET8551T high gain Transimpedance Amplifier (TIA) and the ONET1151P Limiting Amplifier. It is available in a form factor that is compatible with 10.3125Gbps SFP+ LR (...)
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