TPS51200A-Q1

現行

汲極和源極 DDR 終端穩壓器

產品詳細資料

Product type DDR Vin (min) (V) 1.1 Vin (max) (V) 3.5 Vout (min) (V) -0.3 Vout (max) (V) 3.6 Features S3/S5 Support Rating Automotive Operating temperature range (°C) -40 to 125 Iq (typ) (mA) 0.5 DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4, LPDDR2, LPDDR3
Product type DDR Vin (min) (V) 1.1 Vin (max) (V) 3.5 Vout (min) (V) -0.3 Vout (max) (V) 3.6 Features S3/S5 Support Rating Automotive Operating temperature range (°C) -40 to 125 Iq (typ) (mA) 0.5 DDR memory type DDR, DDR2, DDR3, DDR3L, DDR4, LPDDR2, LPDDR3
VSON (DRC) 10 9 mm² 3 x 3
  • AEC-Q100 Qualified for Automotive Applications:
    • Device Temperature Grade 1:
      –40°C ≤ TA ≤ 125°C
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Extended Reliability Testing
  • Input Voltage: Supports 2.5-V Rail and 3.3-V Rail
  • VLDOIN Voltage Range: 1.1 V to 3.5 V
  • Sink and Source Termination Regulator Includes Droop Compensation
  • Requires Minimum Output Capacitance of 20-µF (typically 3 × 10-µF MLCCs) for Memory Termination Applications (DDR)
  • PGOOD to Monitor Output Regulation
  • EN Input
  • REFIN Input Allows for Flexible Input Tracking Either Directly or Through Resistor Divider
  • Remote Sensing (VOSNS)
  • ±10-mA Buffered Reference (REFOUT)
  • Built-in Soft-Start, UVLO and OCL
  • Thermal Shutdown
  • Meets DDR, DDR2 JEDEC Specifications; Supports DDR3 and Low-Power DDR3 and DDR4 VTT Applications
  • VSON-10 Package With Exposed Thermal Pad
  • AEC-Q100 Qualified for Automotive Applications:
    • Device Temperature Grade 1:
      –40°C ≤ TA ≤ 125°C
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Extended Reliability Testing
  • Input Voltage: Supports 2.5-V Rail and 3.3-V Rail
  • VLDOIN Voltage Range: 1.1 V to 3.5 V
  • Sink and Source Termination Regulator Includes Droop Compensation
  • Requires Minimum Output Capacitance of 20-µF (typically 3 × 10-µF MLCCs) for Memory Termination Applications (DDR)
  • PGOOD to Monitor Output Regulation
  • EN Input
  • REFIN Input Allows for Flexible Input Tracking Either Directly or Through Resistor Divider
  • Remote Sensing (VOSNS)
  • ±10-mA Buffered Reference (REFOUT)
  • Built-in Soft-Start, UVLO and OCL
  • Thermal Shutdown
  • Meets DDR, DDR2 JEDEC Specifications; Supports DDR3 and Low-Power DDR3 and DDR4 VTT Applications
  • VSON-10 Package With Exposed Thermal Pad

The TPS51200A-Q1 device is a sink and source double-data-rate (DDR) termination regulator specifically designed for low input voltage, low-cost, low-noise systems where space is a key consideration.

The device maintains a fast transient response and only requires a minimum output capacitance of 20 µF. The device supports a remote sensing function and all power requirements for DDR, DDR2, DDR3, and Low Power DDR3 and DDR4 VTT bus termination.

In addition, the device provides an open-drain PGOOD signal to monitor the output regulation and an EN signal that can be used to discharge VTT during S3 (suspend to RAM) for DDR applications.

The device is available in the thermally-efficient VSON-10 package, and is rated both green and Pb-free. The device is specified from –40°C to 125°C.

The TPS51200A-Q1 device is a sink and source double-data-rate (DDR) termination regulator specifically designed for low input voltage, low-cost, low-noise systems where space is a key consideration.

The device maintains a fast transient response and only requires a minimum output capacitance of 20 µF. The device supports a remote sensing function and all power requirements for DDR, DDR2, DDR3, and Low Power DDR3 and DDR4 VTT bus termination.

In addition, the device provides an open-drain PGOOD signal to monitor the output regulation and an EN signal that can be used to discharge VTT during S3 (suspend to RAM) for DDR applications.

The device is available in the thermally-efficient VSON-10 package, and is rated both green and Pb-free. The device is specified from –40°C to 125°C.

下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件,然後再試一次。
檢視所有 2
類型 標題 日期
* Data sheet TPS51200A-Q1 Sink and Source DDR Termination Regulator datasheet (Rev. A) PDF | HTML 2018年 12月 13日
Application note DDR VTT Power Solutions: A Competitive Analysis (Rev. A) 2020年 7月 9日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TPS51200EVM — TPS51200 汲極源極 DDR 終端穩壓器

TPS51200EVM 評估板 HPA322A 旨在評估 TI 成本最佳化的 DDR/DDR2/DDR3/LP DDR3 VTT 終端穩壓器 TPS51200 的性能和特性。TPS51200 旨在為 DDR 記憶體提供適當的終止電壓與 10-mA 緩衝參考電壓,該電壓涵蓋 DDR (2.5 V/1.25 V)、DDR2 (1.8 V/0.9 V)、DDR3 (1.5 V/0.75 V)、LP DDR3 (1.2 V/0.6 V) 規格,且僅需最少外部零組件。

使用指南: PDF
TI.com 無法提供
參考設計

TIDA-050071 — 車用離電池處理器電源參考設計,適用於 ADAS 與資訊娛樂系統

此車用離電池處理器電源參考設計提供多功能受保護的電源樹狀架構,可為常見的 ADAS 與資訊娛樂處理器 (如 TDA4x-Q1、AM6x-Q1) 供電。上述處理器可搭配感測融合系統、攝影機模組及域控制器運作。詳細設計指南協助工程師建立受保護的電源系統。提供額外電源軌以支援 DDR 記憶體與輔助負載。設計內建 MSPM0 微控制器 (MCU),可用於設定電源軌電壓與時序。
Design guide: PDF
參考設計

PMP30785 — 適用於驅動監控系統參考設計的車用多軌電源供應

此參考設計展示電子控制單元 (ECU) 驅動監控系統的非隔離式車用電源供應性能。參考設計包含我們的電源產品組合,具有九個電源插座。
Test report: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
VSON (DRC) 10 Ultra Librarian

訂購與品質

內含資訊:
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

內容係由 TI 和社群貢獻者依「現狀」提供,且不構成 TI 規範。檢視使用條款

若有關於品質、封裝或訂購 TI 產品的問題,請參閱 TI 支援。​​​​​​​​​​​​​​

影片