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半橋式驅動器

UCC27211A

現行

具 8V UVLO 和負電壓處理的 4A、120V 半橋式閘極驅動器

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產品規格表

UCC27211A

現行
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Integrated bootstrap diode, Negative Voltage Handling on Input Driver configuration Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 4.5 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 7.2 Fall time (ns) 5.5 Iq (mA) 0.001 Input threshold TTL Channel input logic TTL Switch node voltage (V) -20 Features Integrated bootstrap diode, Negative Voltage Handling on Input Driver configuration Dual, Noninverting, TTL compatible
VSON (DRM) 8 16 mm² 4 x 4
  • –40°C to +150°C junction temperature range
  • Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
  • Maximum boot voltage 120V DC
  • 3.7A source, 4.5A sink output currents
  • Input pins can tolerate –10V to +20V and are independent of supply voltage range
  • TTL compatible inputs
  • 8V to 17V VDD operating range, (20V ABS MAX)
  • 7.2ns rise and 5.5ns fall time with 1000pF load
  • Fast propagation delay times (20ns typical)
  • 4ns delay matching
  • Symmetrical undervoltage lockout for high-side and low-side driver
  • Industry standard package available
    • 4mm × 4mm SON-8
  • –40°C to +150°C junction temperature range
  • Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
  • Maximum boot voltage 120V DC
  • 3.7A source, 4.5A sink output currents
  • Input pins can tolerate –10V to +20V and are independent of supply voltage range
  • TTL compatible inputs
  • 8V to 17V VDD operating range, (20V ABS MAX)
  • 7.2ns rise and 5.5ns fall time with 1000pF load
  • Fast propagation delay times (20ns typical)
  • 4ns delay matching
  • Symmetrical undervoltage lockout for high-side and low-side driver
  • Industry standard package available
    • 4mm × 4mm SON-8

The UCC27211A device driver is based on the popular UCC27201 MOSFET drivers; but, this device offers several significant performance improvements.

The peak output pullup and pulldown current has been increased to 3.7A source and 4.5A sink and thereby allows for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle –10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating.

The switching node of the UCC27211A (HS pin) can handle –(24 - VDD) V maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27211A (TTL inputs) has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 4ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.

The UCC27211A device driver is based on the popular UCC27201 MOSFET drivers; but, this device offers several significant performance improvements.

The peak output pullup and pulldown current has been increased to 3.7A source and 4.5A sink and thereby allows for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle –10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a 20V maximum rating.

The switching node of the UCC27211A (HS pin) can handle –(24 - VDD) V maximum, which allows the high-side channel to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The UCC27211A (TTL inputs) has increased hysteresis that allows for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 4ns between the turn on and turn off of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers which provides symmetric turn on and turn off behavior and forces the outputs low if the drive voltage is below the specified threshold.
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類型 標題 日期
* Data sheet UCC27211A 120V, 3.7A/4.5A Half-Bridge Driver with 8V UVLO datasheet (Rev. D) PDF | HTML 2024年 7月 18日
Product overview UCC272xx and UCC273xx: 120V Half-Bridge Gate Drivers for High-Powered Applications PDF | HTML 2025年 7月 31日
Application note Mapping Application Requirements with the 120V Halfbridge Gate Driver PDF | HTML 2025年 4月 4日
Application note Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 2024年 3月 25日
Application note Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 2024年 1月 24日
Technical article For efficiencies’ sake – how to integrate bidirectional power flow into your UPS design (part 1) PDF | HTML 2024年 1月 11日
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 2023年 9月 8日
Application note Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 2021年 4月 7日
Application note Understanding and comparing peak current capability of gate drivers PDF | HTML 2021年 3月 30日
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 2020年 5月 12日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 2019年 10月 22日
White paper Power Electronics in Motor Drives: Where is it? (Rev. A) 2019年 10月 1日
Application note Maximizing DC/DC converter designs with UCC27282 2019年 1月 18日
Application note UCC27282 Improving motor drive system robustness 2019年 1月 11日
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
Technical article How to achieve higher system efficiency- part one: high-current gate drivers PDF | HTML 2016年 11月 16日

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模擬型號

UCC27211 PSpice Transient Model

SLUM245.ZIP (31 KB) - PSpice Model
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UCC27211 TINA-TI Transient Reference Design

SLUM304.TSC (107 KB) - TINA-TI Reference Design
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UCC27211 TINA-TI Transient Spice Model

SLUM305.ZIP (9 KB) - TINA-TI Spice Model
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UCC27211 Unencrypted PSpice Transient Model

SLUM504.ZIP (1 KB) - PSpice Model
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