LMG3411EVM-029

LMG3411R070 600-V 70-mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card

LMG3411EVM-029

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Overview

LMG3411EVM-029 configures two LMG3411R070 GaN FETs in a half bridge with the cycle by cycle over current protection function and all the necessary auxiliary peripheral circuitry.This EVM is designed to work in conjunction with larger systems.
  • Input voltage operates up to 600V
  • Simple open loop design to evaluate performance of LMG3411R070
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Cycle by cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Gallium nitride (GaN) ICs
LMG3411R070 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection
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Daughter card

LMG3411EVM-029 – LMG3411R070 600-V 70-mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card

Evaluation board

LMG34XX-BB-EVM – LMG34xx GaN system-level evaluation motherboard for LMG341x family

TI's Standard Terms and Conditions for Evaluation Items apply.

Design files

LMG3411EVM Design Files SNOC044.ZIP (3544 KB) LMG3411EVM-029 Design Files SNOC045.ZIP (4414 KB)

Technical documentation

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Type Title Date
* User guide Using the LMG3411R070EVM Half-Bridge and LMG34XXBB-EVM Breakout Board EVM Oct. 24, 2018
Datasheet LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection datasheet (Rev. F) Apr. 06, 2020

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