LMG3410R070 600-V 70-mΩ GaN half-bridge daughter card


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The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching.  This EVM is capable of delivering up to 8 A of output current with adequate thermal management (forced air, low frequency operation, etc) to insure the maximum operating temperature is not exceeded.  This EVM is not suitable for transient measurements since it is an open loop board.
Only a single pulse width modulated input is required, with complementary pulse width modulated signals and corresponding dead time generated on board.  Probe points are provided to allow for key logic and power stage waveforms to be measured with oscilloscope probes that have short ground springs.
The LMG3410-HB-EVM configures two LMG3410R070 GaN FETs in a half bridge with all the necessary auxiliary peripheral circuitry.  This EVM is designed to work in conjunction with larger systems, such as the LMG34XX-BB-EVM or a custom designed power stage.  By providing the LMG3410R070 on a high performance layout with convenient connection points, operation and in circuit measurements can quickly and easily be achieved.

No level shifting or isolation is required since all necessary circuitry is included.  The auxiliary bias can be generated in two ways, default with isolated power supplies that require only a single 5V input and configurable to operate in bootstrap mode off 12V.  Exposed copper pads are provided for heatsink assembly to allow for higher power dissipation.

  • Input voltage operates up to 600V
  • Simple open loop design to evaluate performance of LMG3410R070
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes

  • LMG3410-HB-EVM

Gallium nitride (GaN) power stages
LMG3410R070 600-V 70mΩ GaN with integrated driver and protection LMG3411R050 600-V 50mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection LMG3411R070 600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection


Digital isolators
ISO7831 Highest isolation rating, triple-channel, 2/1, reinforced digital isolator
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Daughter card

LMG3410-HB-EVM — LMG3410R070 600-V 70-mΩ GaN half-bridge daughter card

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Type Title Date
* EVM User's guide Using the LMG3410-HB-EVM Half-Bridge and LMG34XX-BB-EVM Breakout Board EVM (Rev. A) 03 May 2017
Data sheet LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection datasheet (Rev. F) PDF | HTML 06 Apr 2020
Data sheet LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection datasheet (Rev. B) PDF | HTML 16 Jan 2020
Certificate LMG3410-HB-EVM EU Declaration of Conformity (DoC) 02 Jan 2019
Technical article Is integrated GaN changing the conventional wisdom? PDF | HTML 07 Oct 2016

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