LMG3410EVM-031

LMG3410R150 600-V 150-mΩ GaN half-bridge daughter card

LMG3410EVM-031

Order now

Overview

LMG3410EVM-031 configures two LMG3410R150 GaN FETs in a half bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry.This EVM is designed to work in conjunction with larger systems.

Features
  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate performance of LMG3410R150
  • Single PWM input on board for PWM signal with 50-ns dead time
  • Latched over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Gallium nitride (GaN) ICs
LMG3410R150 600-V 150-mΩ GaN with integrated driver and overcurrent protection

Order & start development

Explore packages of hardware, software and documentation

HARDWARE AND SOFTWARE PACKAGE

Evaluating LMG3410R150 GaN FET power stage

View package

Order this hardware only

Daughter card

LMG3410EVM-031 – LMG3410R150 600-V 150-mΩ GaN half-bridge daughter card

In stock
Limit: 5
TI's Standard Terms and Conditions for Evaluation Items apply.

Design files

LMG3410EVM-031 Design File SNOC046.ZIP (7311 KB)

Technical documentation

star
= Top documentation selected by TI
No results found. Please clear your search and try again.
View all 3
Type Title Date
* User guide LMG3410R150-031 EVM User Guide Apr. 02, 2019
Data sheet LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) Feb. 13, 2020
Certificate LMG3410EVM-031 EU Declaration of Conformity (DoC) Apr. 23, 2019

Support & training

TI E2E™ forums with technical support from TI engineers

View all forum topics

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​

Videos