LMG3411EVM-031

LMG3411R150 600-V 150-mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card

LMG3411EVM-031

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Overview

LMG3411EVM-031 configures two LMG3411R150 GaN FETs in a half bridge with the cycle by cycle over current protection function and all the necessary auxiliary peripheral circuitry.  This EVM is designed to work in conjunction with larger systems.

Features
  • Input voltage operates up to 600V
  • Simple open loop design to evaluate performance of LMG3411R150
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Cycle by cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Gallium nitride (GaN) ICs
LMG3411R150 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

Get started

  • Order the LMG3411R150 600-V 150-mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card and the optional LMG34xx GaN system-level evaluation motherboard for LMG341x Family
  • Read the LMG3411R150-031 EVM User's Guide

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HARDWARE AND SOFTWARE PACKAGE

Evaluating LMG3411R150 GaN FET power stage

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Daughter card

LMG3411EVM-031 – LMG3411R150 600-V 150-mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card

TI's Standard Terms and Conditions for Evaluation Items apply.

Design files

LMG3411EVM-031 Gerber Files SNOC048.ZIP (2398 KB)

Technical documentation

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Type Title Date
* User guide LMG3411R150-031 EVM user guide Jan. 17, 2019
Datasheet LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection datasheet (Rev. B) Feb. 13, 2020
More literature LMG3411EVM-031 EU Declaration of Conformity (DoC) Mar. 18, 2019

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