Driving and protection evaluation board for SiC and IGBT transistors and power modules
UCC21710QDWEVM-025
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Description & Features

Technical documentation

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Key Document

Description

The UCC21710QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation drivers UCC21710 in SOIC-16DW package with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated DC-DC transformer bias supplies.

Features
  • 10-A peak, split output drive current with programmable drive voltages
  • Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
  • Short circuit protection with soft turn OFF and Miller clamp with internal FET
  • Robust noise-immune solution with CMTI > 100 V/ns

What's Included

  • Power modules not included

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UCC21710QDWEVM-025:
Driving and protection evaluation board for SiC and IGBT transistors and power modules

$199.00(USD)


Pricing may vary.



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Technical documentation
User guides (1)
Title Type Size (KB) Date
PDF 7399 09 Sep 2019
Design files (1)
Title Type Size (KB) Date
ZIP 5113 27 Jul 2020

TI Devices (6)

Part Number Name Product Family
SN6505B  Low-noise, 1-A, 420-kHz transformer driver with soft start for isolated power supplies  Isolation 
SN74AHC1G08-Q1  Automotive Catalog Single 2-Input Positive-AND Gate  Gate 
TPS3700-Q1  Automotive high-voltage (18-V) window voltage detector for overvoltage and undervoltage monitoring  Power management 
TPS709  150-mA, 30-V, ultra-low-IQ, low-dropout voltage regulator with reverse current protection & enable  Power management 
UCC21710  ±10-A 5.7-kV RMS single channel isolated gate driver with overcurrent protection  Gate drivers 
UCC21710-Q1  Automotive ±10-A 5.7kV RMS single channel isolated gate driver for SiC/IGBT  Gate drivers 

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