Driving and protection evaluation board for SiC and IGBT transistors and power modules


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The UCC21710QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation drivers UCC21710 in SOIC-16DW package with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated DC-DC transformer bias supplies.

  • 10-A peak, split output drive current with programmable drive voltages
  • Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
  • Short circuit protection with soft turn OFF and Miller clamp with internal FET
  • Robust noise-immune solution with CMTI > 100 V/ns

  • Power modules not included

Isolated gate drivers
UCC21710 5.7kVrms ±10A, single-channel-isolated gate driver with OC detection, internal clamp for IGBT/SiC UCC21710-Q1 Automotive 5.7kVrms 10A single-channel isolated gate driver with overcurrent protection for IGBT/SiC


Linear & low-dropout (LDO) regulators
TPS709 150-mA, 30-V, ultra-low-IQ, low-dropout voltage regulator with reverse current protection and enable


Supervisor & reset ICs
TPS3700-Q1 Automotive high-voltage (18-V) window voltage detector for overvoltage and undervoltage monitoring


Transformer drivers
SN6505B Low-noise, 1-A, 420-kHz transformer driver with soft start for isolated power supplies
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Evaluation board

UCC21710QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules

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Design tool

UCC217xxEVM Design Files — SLURAZ2.ZIP (5113KB)

TI's Standard Terms and Conditions for Evaluation Items apply.

Technical documentation

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* User guide UCC217xx Family Driving and Protecting SiC and IGBT Power Modules and Transistor (Rev. B) 09 Sep 2019

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