TPS709

The ISO5852SDWEVM-017 is a compact, dual chanel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for half-bridge Sic MOSFET and IGBT Power Modules in standard 62-mm package. This TI EVM is based on 5.7-kVrms reinforced isolation driver IC ISO5852SDW in (...)

• 20-A peak, split output drive current with programmable drive voltages
• Two 5-kVrms reinforced isolated channels to support up to 1700 V input rail
• Short circuit protection with soft turn OFF and 2-A Miller clamp ability
• Robust noise-immune solution with CMTI > 100 V/ns
• Isolated module temperature and (...)

• Demonstrates driver capability of 1ns pulses >50A
• Extremely short propagation delay: 2.5ns typical, 4.5ns max
• 210 ps typical rise/fall time
• Schmitt-trigger type CMOS inputs for robustness
• Advanced layout with >500pH of inductace

The MULTIPKGLDOEVM-823 evaluation module (EVM) helps you evaluate the operation and performance of several common packages of linear regulators for possible use in circuit applications. This particular EVM configuration has a DRB, DRV, DQN and DBV footprint for you to solder and (...)

• Supports almost all LDO linear regulators in DBV, DRB, DRV and DQN packages

• 2% accuracy over temperature
• Ultra-low IQ: 1 µA
• Shutdown current: 150 nA
• Input voltage: 2.5 V to 30 V
• Stable with cost-effective ceramic capacitors
• 300-mV dropout at 50 mA
• Protections: overcurrent, overtemperature and reverse-current
• SOT23-5 DBV package

• 10-A peak, split output drive current with programmable drive voltages
• Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
• Short circuit protection with soft turn OFF and Miller clamp with internal FET
• Robust noise-immune solution with CMTI > 100 V/ns

The UCC21732QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)

• 10-A peak, split output drive current with programmable drive voltages
• Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
• Short circuit protection with two-level soft turn OFF and Miller clamp drive signal for external FET
• Robust noise-immune solution with CMTI > 100 V/ns

• 10-A peak, split output drive current with programmable drive voltages
• Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
• Short circuit protection using desat signal with soft turn OFF and Miller clamp with internal FET
• Robust noise-immune solution with CMTI > 100 V/ns