150-mA, 30-V, ultra-low-IQ, low-dropout voltage regulator with reverse current protection and enable
Product details
Parameters
Package | Pins | Size
Features
- Ultralow IQ: 1 µA
- Reverse Current Protection
- Low ISHUTDOWN: 150 nA
- Input Voltage Range: 2.7 V to 30 V
- Supports 200-mA Peak Output
- 2% Accuracy Over Temperature
- Available in Fixed-Output Voltages:
1.2 V to 6.5 V - Thermal Shutdown and Overcurrent Protection
- Packages: SOT-23-5, WSON-6
Description
The TPS709xx series of linear regulators are ultralow, quiescent current devices designed for power-sensitive applications. A precision band-gap and error amplifier provides 2% accuracy over temperature. Quiescent current of only 1 µA makes these devices ideal solutions for battery-powered, always-on systems that require very little idle-state power dissipation. These devices have thermal-shutdown, current-limit, and reverse-current protections for added safety.
These regulators can be put into shutdown mode by pulling the EN pin low. The shutdown current in this mode goes down to 150 nA, typical.
The TPS709xx series is available in WSON-6 and SOT-23-5 packages.
Similar but not functionally equivalent to the compared device:
Technical documentation
Type | Title | Date | |
---|---|---|---|
* | Datasheet | TPS709 150-mA, 30-V, 1-µA IQ Voltage Regulators with Enable datasheet (Rev. G) | Nov. 04, 2015 |
Application note | Avoid Start-up Overshoot of LDO | Mar. 12, 2020 | |
Application note | A Topical Index of TI LDO Application Notes (Rev. F) | Jun. 27, 2019 | |
Technical articles | LDO basics: capacitor vs. capacitance | Aug. 01, 2018 | |
Technical articles | LDO Basics: Preventing reverse current | Jul. 25, 2018 | |
Selection guide | Power Management Guide 2018 (Rev. R) | Jun. 25, 2018 | |
Technical articles | LDO basics: introduction to quiescent current | Jun. 20, 2018 | |
Selection guide | Low Dropout Regulators Quick Reference Guide (Rev. P) | Mar. 21, 2018 | |
Technical articles | How to choose the right kind of DC/DC conversion for your appliance design | Dec. 04, 2017 | |
User guide | Universal Low-Dropout (LDO) Linear Voltage Regulator EVM User's Guide | Oct. 12, 2016 | |
Application note | Linear power for automated industrial systems | Jan. 09, 2015 | |
User guide | TPS709xxEVM-110 Evaluation Module (Rev. A) | Sep. 05, 2012 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.Hardware development
Description
The ISO5852SDWEVM-017 is a compact, dual chanel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for half-bridge Sic MOSFET and IGBT Power Modules in standard 62-mm package. This TI EVM is based on 5.7-kVrms reinforced isolation driver IC ISO5852SDW in (...)
Features
- 20-A peak, split output drive current with programmable drive voltages
- Two 5-kVrms reinforced isolated channels to support up to 1700 V input rail
- Short circuit protection with soft turn OFF and 2-A Miller clamp ability
- Robust noise-immune solution with CMTI > 100 V/ns
- Isolated module temperature and (...)
Description
Features
- Demonstrates driver capability of 1ns pulses >50A
- Extremely short propagation delay: 2.5ns typical, 4.5ns max
- 210 ps typical rise/fall time
- Schmitt-trigger type CMOS inputs for robustness
- Advanced layout with >500pH of inductace
Description
The MULTIPKGLDOEVM-823 evaluation module (EVM) helps you evaluate the operation and performance of several common packages of linear regulators for possible use in circuit applications. This particular EVM configuration has a DRB, DRV, DQN and DBV footprint for you to solder and (...)
Features
- Supports almost all LDO linear regulators in DBV, DRB, DRV and DQN packages
Description
Features
- 2% accuracy over temperature
- Ultra-low IQ: 1 µA
- Shutdown current: 150 nA
- Input voltage: 2.5 V to 30 V
- Stable with cost-effective ceramic capacitors
- 300-mV dropout at 50 mA
- Protections: overcurrent, overtemperature and reverse-current
- SOT23-5 DBV package
Description
Features
- 10-A peak, split output drive current with programmable drive voltages
- Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
- Short circuit protection with soft turn OFF and Miller clamp with internal FET
- Robust noise-immune solution with CMTI > 100 V/ns
Description
The UCC21732QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)
Features
- 10-A peak, split output drive current with programmable drive voltages
- Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
- Short circuit protection with two-level soft turn OFF and Miller clamp drive signal for external FET
- Robust noise-immune solution with CMTI > 100 V/ns
Description
Features
- 10-A peak, split output drive current with programmable drive voltages
- Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
- Short circuit protection using desat signal with soft turn OFF and Miller clamp with internal FET
- Robust noise-immune solution with CMTI > 100 V/ns
Design tools & simulation
Reference designs
CAD/CAE symbols
Package | Pins | Download |
---|---|---|
SOT-23 (DBV) | 5 | View options |
WSON (DRV) | 6 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
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