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UCC21710-Q1

ACTIVE

Automotive 5.7kVrms 10A single-channel isolated gate driver with overcurrent protection for IGBT/SiC

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Data sheet

UCC21710-Q1

ACTIVE
Data sheet Order now

Product details

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Transient isolation voltage (VIOTM) (VPK) 8400 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Short circuit protection, Soft turnoff Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input VCC (min) (V) 3 Input VCC (max) (V) 5.5 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bus voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Transient isolation voltage (VIOTM) (VPK) 8400 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Short circuit protection, Soft turnoff Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input VCC (min) (V) 3 Input VCC (max) (V) 5.5 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bus voltage (max) (V) 2121 Rise time (ns) 33 Fall time (ns) 27 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7-kV RMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 0: -40°C to +150°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C6
  • SiC MOSFETs and IGBTs up to 2121V pk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • 4-A internal active miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 component recognition program
  • 5.7-kV RMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 0: -40°C to +150°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C6
  • SiC MOSFETs and IGBTs up to 2121V pk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • 4-A internal active miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
    • UL 1577 component recognition program

The UCC21710-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21710-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21710 -Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21710-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21710-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21710 -Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.
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Technical documentation

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Type Title Date
* Data sheet UCC21710-Q1 10-A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. C) PDF | HTML 05 May 2023
Application note HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers (Rev. B) PDF | HTML 21 Oct 2022
Certificate UCC21710QDWEVM-054 EU RoHS Declaration of Conformity (DoC) 24 Aug 2022
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. R) 12 Jul 2022
White paper Addressing high-voltage design challenges with reliable and affordable isolation (Rev. A) PDF | HTML 06 Jun 2022
White paper 以可靠且經濟實惠的隔離技術解決高電壓設計難題 (Rev. A) PDF | HTML 06 Jun 2022
White paper 높 은 신뢰도와 합리적인 가격대의 절연 기술 개발과 관련한 고전압 설계 문 제의 해결.. (Rev. A) PDF | HTML 06 Jun 2022
Application note The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dec 2021
Application note Understanding the Short Circuit Protection for Silicon Carbide MOSFETs (Rev. B) 13 May 2020
E-book Ein Techniker-Leitfaden für Industrieroboter-Designs 25 Mar 2020
E-book E-book: An engineer’s guide to industrial robot designs 12 Feb 2020
Application note Performance of the Analog PWM Channel in Smart Gate Drivers 16 Jan 2020
Design guide SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing 18 Dec 2019
User guide UCC217xx Family Driving and Protecting SiC and IGBT Power Modules and Transistor (Rev. B) 09 Sep 2019
Technical article Eight questions about monitoring and protection in hybrid and electric vehicles 22 May 2019
Application note Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation 30 Jan 2019
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21710QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules

The UCC21710QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)
User guide: PDF
Not available on TI.com
Simulation model

UCC21710 PSpice Transient Model

SLUM679.ZIP (89 KB) - PSpice Model
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Simulation model

UCC21710 Unencrypted PSpice Transient Model

SLUM716.ZIP (6 KB) - PSpice Model
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Simulation model

UCC21732QDWRQ1 PSPICE Model

SLUM723.ZIP (6 KB) - PSpice Model
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Calculation tool

UCC217xx XL Calculator Tool

SLUC695.ZIP (1108 KB)
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Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Reference designs

PMP23223 — Smart isolated gate driver with bias supply reference design

This reference design demonstrates the combination of UCC21732 gate driver with a UCC14xxx series bias supply. This design can be used to drive a variety of power switches, including connecting directly to a Wolfspeed Silicon Carbide (SiC) field-effect transistor (FET) module. This reference design (...)
Test report: PDF
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SOIC (DW) 16 View options
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