UCC21710-Q1
Automotive 5.7kVrms 10A single-channel isolated gate driver with overcurrent protection for IGBT/SiC
UCC21710-Q1
- 5.7-kV RMS single channel isolated gate driver
- AEC-Q100 qualified for automotive applications
- Device temperature grade 0: -40°C to +150°C ambient operating temperature range
- Device HBM ESD classification level 3A
- Device CDM ESD classification level C6
- SiC MOSFETs and IGBTs up to 2121V pk
- 33-V maximum output drive voltage (VDD-VEE)
- ±10-A drive strength and split output
- 150-V/ns minimum CMTI
- 270ns response time fast overcurrent protection
- 4-A internal active miller clamp
- 400mA soft turn-off when fault happens
- Isolated analog sensor with PWM output for
- Temperature sensing with NTC, PTC or thermal diode
- High voltage DC-Link or phase voltage
- Alarm FLT on over current and reset from RST/EN
- Fast enable/disable response on RST/EN
- Reject <40ns noise transient and pulse on input pins
- 12V VDD UVLO with power good on RDY
- Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
- 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
- SOIC-16 DW package with creepage and clearance distance > 8mm
- Operating junction temperature –40°C to 150°C
- Safety-related certifications:
- Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
- UL 1577 component recognition program
The UCC21710-Q1 is a galvanic isolated single channel gate driver designed for up to 1700-V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21710-Q1 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).
The UCC21710 -Q1 includes the state-of-the-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers versatility and simplifying the system design effort, size and cost.

Request more information
The UCC21710-Q1 safety manual and safety fit rate report are available. Request now
Similar products you might be interested in
Same functionality with different pin-out to the compared device
Technical documentation
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
UCC21710QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules
PSPICE-FOR-TI — PSpice® for TI design and simulation tool
PMP23223 — Smart isolated gate driver with bias supply reference design
Package | Pins | Download |
---|---|---|
SOIC (DW) | 16 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
TI E2E™ forums with technical support from TI engineers
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.