The UCC21710-Q1 is a galvanic isolated single channel gate driver
designed for up to 1700V SiC MOSFETs and IGBTs with advanced protection features, best-in-class
dynamic performance and robustness. UCC21710-Q1 has up to ±10-A peak source
and sink current.
The input side is isolated from the output side with SiO2
capacitive isolation technology, supporting up to 1.5-kVRMS working voltage,
12.8-kVPK surge immunity with longer than 40 years Isolation barrier life,
as well as providing low part-to-part skew, and >150V/ns common mode noise
The UCC21710-Q1 includes the
state-of-art protection features, such as fast overcurrent and short circuit detection, shunt
current sensing support, fault reporting, active miller clamp, and input and output side power
supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM
sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers
versatility and simplifying the system design effort, size and cost.