Product details

Number of channels (#) 1 Isolation rating (Vrms) 5700 Power switch IGBT, SiCFET Peak output current (A) 10 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8000 DIN V VDE V 0884-10 working voltage (Vpk) 2121 Output VCC/VDD (Max) (V) 33 Output VCC/VDD (Min) (V) 13 Input VCC (Min) (V) 3 Input VCC (Max) (V) 5.5 Prop delay (ns) 90 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 12
Number of channels (#) 1 Isolation rating (Vrms) 5700 Power switch IGBT, SiCFET Peak output current (A) 10 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 8000 DIN V VDE V 0884-10 working voltage (Vpk) 2121 Output VCC/VDD (Max) (V) 33 Output VCC/VDD (Min) (V) 13 Input VCC (Min) (V) 3 Input VCC (Max) (V) 5.5 Prop delay (ns) 90 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 12
SOIC (DW) 16 77 mm² 10.3 x 7.5
  • 5.7-kVRMS single channel isolated gate driver
  • Drives SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off under fault condition
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40-ns noise transient and pulses on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C
  • 5.7-kVRMS single channel isolated gate driver
  • Drives SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off under fault condition
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40-ns noise transient and pulses on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8 mm
  • Operating junction temperature –40°C to 150°C

The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage with longer than 40 years isolation barrier life, 12.8-kVPK surge immunity, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage with longer than 40 years isolation barrier life, 12.8-kVPK surge immunity, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).

The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

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Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21710QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules

The UCC21710QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)
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Simulation model

UCC21710 PSpice Transient Model

SLUM679.ZIP (89 KB) - PSpice Model
Simulation model

UCC21710 Unencrypted PSpice Transient Model

SLUM716.ZIP (6 KB) - PSpice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Design tool

UCC217xxEVM Design Files

SLURAZ2.ZIP (5113 KB)
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SOIC (DW) 16 View options

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