SLVSGV9 august   2023 DRV8213

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Diagrams
    7. 7.7 Typical Operating Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 External Components
    4. 8.4 Feature Description
      1. 8.4.1 Bridge Control
      2. 8.4.2 Current Sense and Regulation (IPROPI)
        1. 8.4.2.1 Current Sensing and Current Mirror Gain Selection
        2. 8.4.2.2 Current Regulation
      3. 8.4.3 Hardware Stall Detection
      4. 8.4.4 Protection Circuits
        1. 8.4.4.1 Overcurrent Protection (OCP)
        2. 8.4.4.2 Thermal Shutdown (TSD)
        3. 8.4.4.3 VM Undervoltage Lockout (UVLO)
    5. 8.5 Device Functional Modes
      1. 8.5.1 Active Mode
      2. 8.5.2 Low-Power Sleep Mode
      3. 8.5.3 Fault Mode
    6. 8.6 Pin Diagrams
      1. 8.6.1 Logic-Level Inputs
      2. 8.6.2 Tri-Level Input
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Brushed DC Motor
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Motor Voltage
          2. 9.2.1.2.2 Motor Current
        3. 9.2.1.3 Stall Detection
          1. 9.2.1.3.1 Detailed Design Procedure
            1. 9.2.1.3.1.1 Hardware Stall Detection Application Description
              1. 9.2.1.3.1.1.1 Hardware Stall Detection Timing
              2. 9.2.1.3.1.1.2 Hardware Stall Threshold Selection
            2. 9.2.1.3.1.2 Software Stall Detection Application Description
              1. 9.2.1.3.1.2.1 Software Stall Detection Timing
              2. 9.2.1.3.1.2.2 Software Stall Threshold Selection
        4. 9.2.1.4 Application Curves
        5. 9.2.1.5 Thermal Performance
          1. 9.2.1.5.1 Steady-State Thermal Performance
          2. 9.2.1.5.2 Transient Thermal Performance
  11. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance
  12. 11Layout
    1. 11.1 Layout Guidelines
  13. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.4.1 Bridge Control

The DRV8213 output consists of four N-channel MOSFETs designed to drive high current. These outputs are controlled by the two PWM inputs IN1 and IN2 as listed in Table 8-2.

Table 8-2 H-Bridge Control
IN1IN2OUT1OUT2DESCRIPTION
00High-ZHigh-ZCoast; H-bridge disabled to High-Z (sleep entered after tAUTOSLEEP)
01LHReverse (Current OUT2 → OUT1)
10HLForward (Current OUT1 → OUT2)
11LLBrake; low-side slow decay

The inputs can be set to static voltages for 100% duty cycle drive, or they can be pulse-width modulated (PWM) for variable motor speed. When using PWM, switching between driving and braking typically works best. For example, to drive a motor forward with 50% of the maximum RPM, IN1 = 1 and IN2 = 0 during the driving period, and IN1 = 1 and IN2 = 1 during the other period. Alternatively, the coast mode (IN1 = 0, IN2 = 0) for fast current decay is also available. Figure 8-3 shows how the motor current flows through the H-bridge. The input pins can be powered before VM or VCC are applied.

GUID-3328670C-EFDE-4E8D-A2B0-1A796745B24E-low.svgFigure 8-3 H-Bridge Current Paths

When an output changes from driving high to driving low, or driving low to driving high, dead time is automatically inserted to prevent shoot-through. The tDEAD time is the time in the middle when the output is High-Z. If the output pin is measured during tDEAD, the voltage depends on the direction of current. If the current is leaving the pin, the voltage is a diode drop below ground. If the current is entering the pin, the voltage is a diode drop above VM. This diode is the body diode of the high-side or low-side FET.

The propagation delay time (tPD) is measured as the time between an input edge to output change. This time accounts for input deglitch time and other internal logic propagation delays. The input deglitch time prevents noise on the input pins from affecting the output state. Additional output slew delay timing accounts for FET turn on or turn off times (tRISE and tFALL).