SBOSA45C february   2022  – may 2023 TMP1826

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Description (cont.)
  7. 6 Device Comparison
  8. 7 Pin Configuration and Functions
  9. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 1-Wire Interface Timing
    7. 8.7 EEPROM Characteristics
    8. 8.8 Timing Diagrams
    9. 8.9 Typical Characteristics
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Power Up
      2. 9.3.2  Power Mode Switch
      3. 9.3.3  Bus Pullup Resistor
      4. 9.3.4  Temperature Results
      5. 9.3.5  Temperature Offset
      6. 9.3.6  Temperature Alert
      7. 9.3.7  Standard Device Address
        1. 9.3.7.1 Unique 64-Bit Device Address and ID
      8. 9.3.8  Flexible Device Address
        1. 9.3.8.1 Non-Volatile Short Address
        2. 9.3.8.2 IO Hardware Address
        3. 9.3.8.3 Resistor Address
        4. 9.3.8.4 Combined IO and Resistor Address
      9. 9.3.9  CRC Generation
      10. 9.3.10 Functional Register Map
      11. 9.3.11 User Memory Map
      12. 9.3.12 Bit Communication
        1. 9.3.12.1 Host Write, Device Read
        2. 9.3.12.2 Host Read, Device Write
      13. 9.3.13 Bus Speed
      14. 9.3.14 NIST Traceability
    4. 9.4 Device Functional Modes
      1. 9.4.1 Conversion Modes
        1. 9.4.1.1 Basic One-Shot Conversion Mode
        2. 9.4.1.2 Auto Conversion Mode
        3. 9.4.1.3 Stacked Conversion Mode
        4. 9.4.1.4 Continuous Conversion Mode
      2. 9.4.2 Alert Function
        1. 9.4.2.1 Alert Mode
        2. 9.4.2.2 Comparator Mode
      3. 9.4.3 1-Wire Interface Communication
        1. 9.4.3.1 Bus Reset Phase
        2. 9.4.3.2 Address Phase
          1. 9.4.3.2.1 READADDR (33h)
          2. 9.4.3.2.2 MATCHADDR (55h)
          3. 9.4.3.2.3 SEARCHADDR (F0h)
          4. 9.4.3.2.4 ALERTSEARCH (ECh)
          5. 9.4.3.2.5 SKIPADDR (CCh)
          6. 9.4.3.2.6 OVD SKIPADDR (3Ch)
          7. 9.4.3.2.7 OVD MATCHADDR (69h)
          8. 9.4.3.2.8 FLEXADDR (0Fh)
        3. 9.4.3.3 Function Phase
          1. 9.4.3.3.1  CONVERTTEMP (44h)
          2. 9.4.3.3.2  WRITE SCRATCHPAD-1 (4Eh)
          3. 9.4.3.3.3  READ SCRATCHPAD-1 (BEh)
          4. 9.4.3.3.4  COPY SCRATCHPAD-1 (48h)
          5. 9.4.3.3.5  WRITE SCRATCHPAD-2 (0Fh)
          6. 9.4.3.3.6  READ SCRATCHPAD-2 (AAh)
          7. 9.4.3.3.7  COPY SCRATCHPAD-2 (55h)
          8. 9.4.3.3.8  READ EEPROM (F0h)
          9. 9.4.3.3.9  GPIO WRITE (A5h)
          10. 9.4.3.3.10 GPIO READ (F5h)
      4. 9.4.4 NVM Operations
        1. 9.4.4.1 Programming User Data
        2. 9.4.4.2 Register and Memory Protection
          1. 9.4.4.2.1 Scratchpad-1 Register Protection
          2. 9.4.4.2.2 User Memory Protection
    5. 9.5 Programming
      1. 9.5.1 Single Device Temperature Conversion and Read
      2. 9.5.2 Multiple Device Temperature Conversion and Read
      3. 9.5.3 Register Scratchpad-1 Update and Commit
      4. 9.5.4 Single Device EEPROM Programming and Verify
      5. 9.5.5 Single Device EEPROM Page Lock Operation
      6. 9.5.6 Multiple Device IO Read
      7. 9.5.7 Multiple Device IO Write
    6. 9.6 Register Map
      1. 9.6.1  Temperature Result LSB Register (Scratchpad-1 offset = 00h) [reset = 00h]
      2. 9.6.2  Temperature Result MSB Register (Scratchpad-1 offset = 01h) [reset = 00h]
      3. 9.6.3  Status Register (Scratchpad-1 offset = 02h) [reset = 3Ch]
      4. 9.6.4  Device Configuration-1 Register (Scratchpad-1 offset = 04h) [reset = 70h]
      5. 9.6.5  Device Configuration-2 Register (Scratchpad-1 offset = 05h) [reset = 80h]
      6. 9.6.6  Short Address Register (Scratchpad-1 offset = 06h) [reset = 00h]
      7. 9.6.7  Temperature Alert Low LSB Register (Scratchpad-1 offset = 08h) [reset = 00h]
      8. 9.6.8  Temperature Alert Low MSB Register (Scratchpad-1 offset = 09h) [reset = 00h]
      9. 9.6.9  Temperature Alert High LSB Register (Scratchpad-1 offset = 0Ah) [reset = F0h]
      10. 9.6.10 Temperature Alert High MSB Register (Scratchpad-1 offset = 0Bh) [reset = 07h]
      11. 9.6.11 Temperature Offset LSB Register (Scratchpad-1 offset = 0Ch) [reset = 00h]
      12. 9.6.12 Temperature Offset MSB Register (Scratchpad-1 offset = 0Dh) [reset = 00h]
      13. 9.6.13 IO Read Register [reset = F0h]
      14. 9.6.14 IO Configuration Register [reset = 00h]
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Bus Powered Application
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
      2. 10.2.2 Supply Powered Application
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
      3. 10.2.3 UART Interface for Communication
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedure
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information
9.4.3.3.5 WRITE SCRATCHPAD-2 (0Fh)

The function is issued by the host to prepare data write to the EEPROM using memory scratchpad.

Figure 9-23 shows that the host first sends 2 bytes for the EEPROM address, followed by 8 data bytes. On receiving the 8 data bytes, the device computes the CRC for total of 10 bytes of address and data received from the host for data integrity check. The function only copies the data to the memory scratchpad, to enable the host to change data, before the final EEPROM erase and program. Additionally, the host may use the memory scratchpad as a 8-byte volatile buffer.

The device does not support byte wise access for EEPROM. All access to the scratchpad are done in increments of 8 bytes. Hence the host must send the address at the 8-byte block boundary. Figure 9-9 shows that any attempt to write data at a non-block boundary will result in data corruption for the corresponding EEPROM page and block.