SLVSH72 December   2023 TPS281C100

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Options
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Device Functional Modes
    4. 8.4 Working Mode
    5. 8.5 Feature Description
      1. 8.5.1 Accurate Current Sense
        1. 8.5.1.1 High Accuracy Sense Mode
      2. 8.5.2 Programmable Current Limit
        1. 8.5.2.1 Short-Circuit and Overload Protection
        2. 8.5.2.2 Capacitive Charging
      3. 8.5.3 Inductive-Load Switching-Off Clamp
      4. 8.5.4 Inductive Load Demagnetization
      5. 8.5.5 Full Protections and Diagnostics
        1. 8.5.5.1 Open-Load Detection
        2. 8.5.5.2 Thermal Protection Behavior
        3. 8.5.5.3 Undervoltage Lockout (UVLO) Protection
        4. 8.5.5.4 Reverse Polarity Protection
        5. 8.5.5.5 Protection for MCU I/Os
        6. 8.5.5.6 Diagnostic Enable Function
        7. 8.5.5.7 Loss of Ground
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 IEC 61000-4-4 EFT
        2. 9.2.1.2 IEC 61000-4-5 Surge
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting RILIM
        2. 9.2.2.2 Selecting RSNS
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 EMC Considerations
      2. 9.4.2 Layout Example
        1. 9.4.2.1 PWP Layout Without a GND Network
        2. 9.4.2.2 PWP Layout With a GND Network
        3. 9.4.2.3 DNT Layout Without a GND Network
      3. 9.4.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DNT|12
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

VS = 6 V to 60 V, TJ = –40°C to 150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VS SUPPLY VOLTAGE AND CURRENT
ILNOM Continuous load current VEN = HI TAMB = 85°C 4.5 A
IIDLE, VS Total device idle state current (including MOSFET) with diagnostics disabled VS ≤ 60 V,  VEN = VDIAG_EN = LO, VOUT = 0 V TJ = –40°C to 85°C 1 1.3 mA
TJ = 150°C 1.5
 		 mA
IIDLE, VS_DIAG VS standby idle state current with diagnostics enabled VS ≤ 60 V, VEN = LO, VDIAG_EN = HI, VOUT = 0 V 1.2 1.7 mA
IQ, VS VS quiescent current with diagnostics disabled VEN = HI, VDIAG_EN = LO IOUT = 0A 0.98 1.3 mA
IQ, VS_DIAG VS quiescent current with diagnostics enabled VENx = HI, VDIAG_EN = HI IOUT = 0A 1.2 1.5 mA
IOUT(OFF) Output leakage current VS ≤ 60 V, 
VEN = 0 V,  Rload = 100k		 0.4 µA
IOUT(OFF,SINK) Output sink current VS ≤ 60 V, 
VEN = 0 V,  VOUT = 24V, VDIAG = 0V		 TJ = –40°C to 85°C 2.1 2.8 mA
TJ = 150°C 2.3 2.6 mA
VOUT(OFF) Output floating voltage VS ≤ 60 V, 
VEN = 0 V,  VOUT floating, VDIAG = 0V		 TJ = –40°C to 85°C 0.9 V
TJ = 150°C 0.9 V
VS UNDERVOLTAGE LOCKOUT (UVLO) INPUT
VS,UVLOR VS undervoltage lockout rising Measured with respect to the GND pin of the device 5.0 5.4 5.75 V
VS,UVLOF VS undervoltage lockout falling Measured with respect to the GND pin of the device 4.1 4.5 4.85 V
VDS CLAMP
VDS,Clamp VDS clamp voltage  FET current = 10 mA VS = 24 V 64 75 81 V
VS = 6 V 48 53 58 V
RON CHARACTERISTICS
RON On-resistance
(Includes MOSFET and package)		 0.5A ≤ IOUT ≤ 3A, VS = 6 V to 60 V TJ = 25°C 83 mΩ
RON On-resistance
(Includes MOSFET and package)		 0.5A ≤ IOUT ≤ 3A, VS = 6 V to 60 V TJ = 125°C 168 mΩ
TJ =  150°C 180 mΩ
RON(REV) On-resistance during reverse polarity 0.5A ≤ IOUT ≤ 3A, VS = –24V TJ = –40°C to 150°C 180 mΩ
RON_AUX VS to VOUT On-resistance
High Accuracy Sense Mode		 VS = 24V, IOUT = 40 mA
 OL_ON=DIAG_EN=5V		 TJ = –40°C to 150°C 4.7 12 Ω
CURRENT LIMIT CHARACTERISTICS
KCL Current Limit Ratio ICL, typ = 5.26 A 52.6 A × kΩ
ICL, typ = 4.15 A 51.9 A × kΩ
ICL, typ = 3.04 A 50.8 A × kΩ
ICL, typ = 1.98 A 49.5 A × kΩ
ICL, typ = 0.96 A 48 A × kΩ
ILIM_STARTUP Peak current limit when switch is enabled (A version) RILIM = 10kΩ to 50kΩ 2 × ICL 6.5 A
tLIM_STARTUP_DELAY Delay time for device to remain in ILIM_STARTUP level (A Version)
 		 12 ms
ICL Current Limit level Short circuit condition, VDS = 1 V RILIM = 50 kΩ 0.73 0.96 1.11 A
RILIM = 25 kΩ 1.5 1.98 2.3 A
RILIM = 16.7 kΩ 2.3 3.04 3.5 A
RILIM = 12.5 kΩ 3.15 4.15 4.77 A
RILIM = 10 kΩ 4 5.26 6.3 A
RILIM = GND, open, or out of range(< 5kΩ, and > 150kΩ) 0.35 0.48 0.6 A
ICL_LINPK Overcurrent Limit Threshold(1) Overload condition RILIM = 25kΩ 1.5 × ICL A
ICL_ENPS Peak current enabling into permanent short RILIM = 50kΩ 4 × ICL A
RILIM = 25kΩ 3.3 × ICL A
RILIM short to GND 5.7 × ICL A
ICL_ENPS2 Peak current enabling into permanent short RILIM = 10 kΩ, t < ILIM_STARTUP_DELAY 2 × ILIM_STARTUP A
tIOS Short circuit response time VS = 24V 0.5 μs
THERMAL SHUTDOWN CHARACTERISTICS
TABS Thermal shutdown 165 185 °C
TREL Relative thermal shutdown 77 °C
tRETRY Retry time (2) Time from fault shutdown until switch re-enable (thermal shutdown). 2 ms
Fault Response Fault reponse to Thermal Shutdown Auto-retry
THYS Absolute Thermal shutdown hysteresis 10 °C
FAULT PIN CHARACTERISTICS
VFAULT FAULT low output voltage IFAULT = 2.5 mA 0.5 V
tFAULT_BLANKING Fault blanking time during startup (A and B Version) VDIAG_EN = 5 V, VEN = 0 to 5 V 12 ms
tFAULT_FLT Fault indication-time Time between fault and FAULT asserting 75 µs
tFAULT_SNS Fault indication-time VDIAG_EN = 5 V
Time between fault and ISNS settling at VSNSFH		 106 µs
CURRENT SENSE CHARACTERISTICS
IKSNS2_EN Load current supported to enable KSNS2 when in KSNS Mode VEN = VDIAG_EN = 5 V, VOL_ON = GND 21 25 30 mA
IKSNS2_DIS Load current to disable KSNS2 when in KSNS2 Mode VEN = VDIAG_EN = 5 V, VOL_ON = GND 75 85 105 mA
KSNS Current sense ratio - Standard Sensing
IOUT / ISNS		 IOUT = 1 A, VOL_ON = GND 800 A/A
KSNS2 Current sense ratio - High Accuracy Sensing
IOUT / ISNS		 IOUT = 20 mA, VOL_ON = 5V 24 A/A
ISNS
Current sense current
 		 VEN = VDIAG_EN = 5 V, VOL_ON = GND IOUT = 4 A 5 mA
–4 6 %
IOUT = 3.5 A 4.375 mA
–4 4 %
IOUT = 3 A 3.75 mA
–4 4 %
IOUT = 2 A 2.5 mA
–4 4 %
IOUT = 1 A 1.25 mA
–4 4 %
IOUT = 0.75 A 0.9375 mA
–6 6 %
IOUT = 0.5 A 0.625 mA
–6 6 %
IOUT = 250 mA 0.3125 mA
–10 10 %
IOUT = 150 mA 0.1875 mA
–10 10 %
IOUT = 60 mA 0.075 mA
–25 25 %
IOUT = 30 mA 0.0375 mA
–25 25 %
ISNS2 Current sense current and accuracy for high accuracy sense mode VEN = VDIAG_EN = 5 V, VOL_ON = 5V IOUT = 20 mA 0.833 mA
–6 6 %
IOUT = 10 mA 0.404 mA
–10 10 %
IOUT = 4 mA 0.161 mA
–12.5 12.5 %
IOUT = 2 mA 0.0800 mA
–15 15 %
IOUT = 1 mA 0.0395 mA
–20 20 %
SNS PIN CHARACTERISTICS
VSNSFH VSNS fault high-level VDIAG_EN = 5 V 4.5 5 5.77 V
VDIAG_EN = 3.3 V, RSNS=Open 3.3 3.95 4.4 V
VDIAG_EN = VIH  2.9 3.2 3.5 V
ISNSFLT ISNS fault high-level VDIAG_EN > VIH,DIAG_EN 5.2 6.4 mA
ISNSleak ISNS leakage VDIAG_EN = 5 V, IL = 0 mA 1.3 µA
VS_ISNS VS headroom needed for full current sense and fault functionality VDIAG_EN = 3.3V 5.9 V
VDIAG_EN = 5V 6.7 V
OPEN LOAD DETECTION CHARACTERISTICS
VOL_OFF OFF state open-load (OL) detection voltage VEN = 0 V, VDIAG_EN = 5 V 1.4 2 2.5 V
ROL_OFF OFF state open-load (OL) detection internal pull-up resistor VEN = 0 V, VDIAG_EN = 5 V VS = 6V 110 125 135 kΩ
VS = 24V 114 140 166 kΩ
VS = 48V 120 140 166 kΩ
tOL_OFF OFF state open-load (OL) detection deglitch time VEN = 0 V, VDIAG_EN = 5 V, When Vs – VOUT < VOL, duration longer than tOL. Open load detected. 480 1050 µs
tOL_OFF_1 OL_OFF and STB indication-time from EN falling VEN = 5 V to 0 V, VDIAG_EN = 5 V
IOUT = 0 mA, VOUT = Vs - VOL		 310 905 µs
tOL_OFF_2 OL and STB indication-time from DIA_EN rising VEN = 0 V, VDIAG_EN = 0 V to 5 V
IOUT = 0 mA, VOUT = VS - VOL		 1080 µs
OL_ON PIN CHARACTERISTICS
VIL, OL_ON Input voltage low-level 0.8 V
VIH, OL_ON Input voltage high-level 1.5 V
VIHYS, OL_ON Input voltage hysteresis 282 mV
ROL_ON Internal pulldown resistor 0.7 1 1.3 MΩ
IIL_OL_ON Input current low-level VOL_ON = -1 V –25 0 µA
IIL, OL_ON Input current low-level VOL_ON = 0.8 V 0.6 .8 1.2 µA
IIH, OL_ON Input current high-level VOL_ON = 5 V 3 5 7 µA
DIAG_EN PIN CHARACTERISTICS
VIL, DIAG_EN Input voltage low-level No GND Network 0.8 V
VIH, DIAG_EN Input voltage high-level No GND Network 1.5 V
VIHYS, DIAG_EN Input voltage hysteresis 275 mV
RDIAG_EN Internal pulldown resistor 200 350 500 kΩ
IIL, DIAG_EN Input current low-level VDIAG_EN = 0.8 V,  VEN=0V 2.9 µA
IIH, DIAG_EN Input current high-level VDIAG_EN = 5 V 14 µA
EN PIN CHARACTERISTICS
VIL, EN Input voltage low-level No GND Network 0.8 V
VIH, EN Input voltage high-level No GND Network 1.5 V
VIHYS, EN Input voltage hysteresis 280 mV
REN Internal pulldown resistor 200 350 500 kΩ
IIL, EN Input current low-level VEN = 0.8 V 2.2 µA
IIH, EN Input current high-level VEN = 5 V 14 µA
(1) The maximum current output under overload condition before current limit regulation.
(2) Data not tested in production.