The LMG3616 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3616 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.
Programmable turn-on slew rates provide EMI and ringing control.
The LMG3616 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | LMG3616650-V270-mΩ GaN FET With Integrated Driver datasheet | PDF | HTML | 14 Nov 2023 |
| Technical article | The benefits of low-power GaN in common AC/DC power topologies | PDF | HTML | 30 Jan 2024 | |
| Product overview | Designing With the LMG362x Family of Low-Power GaN FETs | PDF | HTML | 28 Nov 2023 |
For additional terms or required resources, click any title below to view the detail page where available.
The LMG3626EVM-074 evaluation module (EVM) demonstrates high-efficiency and high-density for a 65-W USB Type-C® power delivery (PD) off-line adapter using the LMG3626 integrated GaN FET with current-sense emulation. The input supports a universal 90 Vac to 265 Vac and the single output can be (...)
| Package | Pins | Download |
|---|---|---|
| VQFN (REQ) | 38 | View options |
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The purpose of this tool is to aid in the design of the main power stage components of a Quasi-Resonant Flyback Converter (QR) with the use of LMG36XX integrated GaN FET.
Rev A