Product details

Continuous current (max) (A) 75 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (Hz) 250000 Sensitivity error (%) 0.3 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
Continuous current (max) (A) 75 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (Hz) 250000 Sensitivity error (%) 0.3 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
SOIC (DVG) 10 106.09 mm² 10.3 x 10.3
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
    • Withstand isolation voltage: 5kVRMS
    • Reinforced working voltage: 1.3kVDC
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±2µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Fast Response
    • Signal bandwidth: 250kHz
    • Propagation delay: 110ns
    • Response time: 1µs
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 25mV/A to 150mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
    • Withstand isolation voltage: 5kVRMS
    • Reinforced working voltage: 1.3kVDC
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±2µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Fast Response
    • Signal bandwidth: 250kHz
    • Propagation delay: 110ns
    • Response time: 1µs
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 25mV/A to 150mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1

The TMCS1123 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 1% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated on-chip Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with minimum 8.1mm creepage and clearance provide up to 1.3kVDC reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

The TMCS1123 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 1% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated on-chip Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with minimum 8.1mm creepage and clearance provide up to 1.3kVDC reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

Download View video with transcript Video

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

TMCS-A-ADAPTER-EVM — TMCS isolated Hall-effect current sensor adapter card for DVG, DVF or DZP packages (IC not included)

The TMCS-A-ADAPTER-EVM is an evaluation module (EVM) intended to facilitate rapid, convenient use of TMCS isolated Hall-effect precision current sense monitors that use the DVG, DVF, or DZP packages. This EVM allows the user push up to 90A current through the Hall-input side while measuring the (...)

User guide: PDF | HTML
Not available on TI.com
Evaluation board

TMCS1123EVM — TMCS1123 evaluation module for isolated Hall-effect current sensing

The TMCS1123EVM evaluation module (EVM) is intended to facilitate rapid, convenient use of the TMCS1123, an isolated Hall-effect precision current sense monitor using an internal ratiometric reference. This EVM allows the user to push the maximum operating current through the Hall-input side while (...)
User guide: PDF | HTML
Reference designs

TIDA-010937 — Isolated low delay high PWM rejection Hall current sense reference design with digital interface

This reference design demonstrates an accurate low latency reinforced isolated bidirectional current sense system using the TMCS1123 precision Hall-effect current sensor for reliable phase current and DC-link current sensing with three phase inverters up to ±62A and less than 100ns over-current (...)
Design guide: PDF
Reference designs

TIDA-010933 — 1.6kW, bidirectional micro inverter based on GaN reference design

This reference design shows a four-input bidirectional 1.6kW GaN-based microinverter with energy storage capability.
Design guide: PDF
Reference designs

TIDA-010938 — 7.2-kW, GaN-based single-phase string inverter with battery energy storage system reference design

This reference design is a single phase string Inverter with two string inputs, each able to handle 10PV panels in series and one energy storage system port that can handle batteries stacks from 80V to 500V. The rated power from string inputs to battery storage systems is up to 7.2kW. The (...)
Design guide: PDF
Package Pins Download
SOIC (DVG) 10 View options

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos