UCC21750-Q1 Automotive, single channel isolated gate driver for SiC/IGBT with advanced protection and high-CMTI | TI.com

UCC21750-Q1
This product is prototype/experimental and has not been released to the market. Testing and final processes may not be complete. This product may be subject to further changes or possible discontinuation.
Automotive, single channel isolated gate driver for SiC/IGBT with advanced protection and high-CMTI

 

Sample availability

Preproduction samples are available (PUCC21750QDWRQ1). Request now

Description

The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21750-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew, >150V/ns common mode noise immunity (CMTI).

The UCC21750-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

Features

  • 5.7-kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 200ns response time fast DESAT protection
  • 4-A Internal active miller clamp
  • 400mA soft turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C

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Parametrics

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Part number Order Isolation rating (Vrms) DIN V VDE V 0884-10 transient overvoltage rating (Vpk) DIN V VDE V 0884-10 working voltage (Vpk) Number of channels (#) Power switch Enable/disable function Output VCC/VDD (Max) (V) Output VCC/VDD (Min) (V) Input VCC (Min) (V) Input VCC (Max) (V) Peak output current (A) Prop delay (ns) Operating temperature range (C) Package Group
UCC21750-Q1 Order now 5700     8400     2121     1     IGBT, SiCFET         33     13     3     5.5     10       -40 to 125     SOIC | 16    
ISO5451-Q1 Order now 5700     8000     1420     1     IGBT         30     15     3     5.5     5     76     -40 to 125     SOIC | 16    
ISO5452-Q1 Order now 5700     8000     1420     1     IGBT
SiCFET    
    30     15     2.25     5.5     5     76     -40 to 125     SOIC | 16    
ISO5852S-Q1 Order now 5700     8000     2121     1     IGBT
SiCFET    
    30     15     2.25     5.5     5     76     -40 to 125     SOIC | 16