INA129-EP Enhanced Product Precision, Low Power Instrumentation Amplifiers | TI.com

INA129-EP (ACTIVE)

Enhanced Product Precision, Low Power Instrumentation Amplifiers

 

Description

The INA129-EP device is a low power, general-purpose instrumentation amplifier offering excellent accuracy. The versatile 3-op amp design and small size make the device ideal for a wide range of applications. Current-feedback input circuitry provides wide bandwidth even at high gain (200 kHz at G = 100).

A single external resistor sets any gain from 1 to 10,000. The INA129-EP provides an industry-standard gain equation; the INA129-EP gain equation is compatible with the AD620.

The INA129-EP device is laser trimmed for very low offset voltage, drift, and high common-mode rejection (113 dB at G ≥ 100). It operates with power supplies as low as ±2.25 V, and quiescent current is only 750 µA–ideal for battery operated systems. Internal input protection can withstand up to ±40 V without damage.

The INA129-EP is available in a 8-Pin SOIC surface-mount package specified for the –55°C to 125°C temperature range.

Features

  • Low Offset Voltage
  • Low Input Bias Current
  • High CMR: 95 dB (Typical)
  • Inputs Protected to ±40 V
  • Wide Supply Range: ±2.25 V to ±18 V
  • Low Quiescent Current: 2 mA (Typical)
  • APPLICATIONS
    • Bridge Amplifier
    • Thermocouple Amplifier
    • RTD Sensor Amplifier
    • Medical Instrumentation
    • Data Acquisition
    • Supports Extreme Temperature Applications:
      • Controlled Baseline
      • One Assembly and Test Site
      • One Fabrication Site
      • Available in Military (–55°C to +125°C)
        Temperature Range(1)
      • Extended Product Life Cycle
      • Extended Product-Change Notification
      • Product Traceability

(1) Custom temperature ranges available
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Parametrics Compare all products in Instrumentation amplifiers

 
Number of channels (#)
Vs (Min) (V)
Vs (Max) (V)
CMRR (Min) (dB)
Input offset (+/-) (Max) (uV)
Input offset drift (+/-) (Max) (uV/C)
Input bias current (+/-) (Max) (nA)
Noise at 1 kHz (Typ) (nV/rt (Hz))
Iq (Typ) (mA)
Bandwidth at min gain (Typ) (MHz)
Gain (Min) (V/V)
Gain (Max) (V/V)
Gain error (+/-) (Max) (%)
Operating temperature range (C)
Package Group
Package size: mm2:W x L (PKG)
Noise at 0.1 Hz-10 Hz (Typ) (uVpp)
Gain non-linearity (+/-) (Max) (%)
INA129-EP
1    
4.5    
36    
120    
100    
0.5    
5    
8    
0.7    
1.3    
1    
10000    
2    
-55 to 125    
SOIC | 8    
8SOIC: 29 mm2: 6 x 4.9 (SOIC | 8)    
0.2    
0.002