10 Revision History
Changes from April 22, 2024 to December 19, 2025 (from Revision G (APRIL 2024) to Revision H (DECEMBER 2025))
-
Global: Updated the introductory sentence in 12 timing
sections.Go
- (Functional Block Diagram): Updated PRU-ICSS blocks to include all supported
feаtures by the deviceGo
- (Device Comparison): Corrected the name of the JTAG User ID register
and note (1)Go
- (Related Products): Updated content and added links to additional
products to complete the designGo
- (ALV FCBGA-N441 Pin Diagram): Changed the figure from a bottom view
a top viewGo
- (Pin Attributes - BALL STATE DURING RESET RX/TX/PULL): Added "High:
The output buffer is enabled and drives VOH" to the TX (Output
buffer) description to account for the MMC0_CMD pin reset
conditionGo
- (Pin Attributes - Pins F18, G18, J21, G19, K20, J20, J18, J17, H17, H19, H18, and G17): Removed the VDD_MMC0 and VDD_DLL_MMC0 core power rails from the "POWER" column since the MMC0 IO operating voltage is unrelated to these core power railsGo
- (Pin Attributes - Pins AA20, AA19, U16, U17, and T14): Removed the VDDA_0P85_USB0 core power rail from the "POWER" column since the USB0 IO operating voltage is unrelated to this core power railGo
- (Pin Attributes - Pins T13, W16, W17, Y15, Y16, AA16, and AA17): Removed the VDDA_0P85_SERDES0 and VDDA_0P85_SERDES0_C core power rails from the "POWER" column since the SERDES0 IO operating voltage is unrelated to these core power railsGo
- (Pin Attributes - Pin J21): Changed the TX value for the MMC0_CMD pin from "Off" to "High" in the "BALL STATE DURING RESET RX/TX/PULL" column to indicate the correct default state of the output buffer during resetGo
- (Signal Descriptions - Global): Changed "PIN TYPE" to "SIGNAL TYPE"
in the header of each Signal Description tableGo
- (Signal Descriptions - ADC0): Added a note to the ADC_EXT_TRIGGER0 and ADC_EXT_TRIGGER1 signals to indicate they have a debounce function Go
- (Signal Descriptions - EPWM0): Corrected EHRPWM0_SYNCO signal descriptionGo
- (Signal Descriptions - EPWM3): Corrected EHRPWM3_SYNCO signal descriptionGo
- (Signal Descriptions - EPWM6): Corrected EHRPWM6_SYNCO signal descriptionGo
- (Signal Descriptions - MCSPI4): Corrected SPI4_CS2 and SPI4_CS3 signal descriptionsGo
- (Signal Descriptions - Power Supply): Updated the table notes associated with the CAP_VDDSx pins to clarify the need for capacitance derating and describe additional connectivity options Go
- (Signal Descriptions - Power Supply): Updated the description of several power rails to clarify their functionGo
- (Signal Descriptions - Power Supply): Updated the description of the EXT_REFCLK1 signal functionGo
- (Signal Descriptions - MCU System): Updated the description of the MCU_PORz signal functionGo
- (Pin Connectivity Requirements): Updated the connectivity
requirements description for the I2C0 and MCU_I2C0 balls to allow connecting
external pull-down resistors when selecting GPIO signal
functionsGo
- (Pin Connectivity Requirements): Updated the connectivity
requirements description for the VMON_1P8_MCU, VMON_1P8_SOC, VMON_3P3_MCU, and
VMON_3P3_SOC ballsGo
- (Absolute Maximum Ratings): Updated the description of several power rails
to clarify their functionGo
- (Power-On Hours): Added the 125°C Industrial and Automotive
temperature range with associated table notesGo
- (Recommended Operating Conditions): Updated the note associated with
the VDD_MMC0 and VDD_DLL_MMC0 power railsGo
- (Recommended Operating Conditions): Updated the description of
several power rails to clarify their functionGo
- (Recommended Operating Conditions): Replaced the VPP parameter
values with a note that points to the Recommended Operating Conditions for OTP
eFuse Programming tableGo
- (Recommended Operating Conditions): Added the 125°C Industrial
temperature rangeGo
- (I2C Open-Drain, and Fail-Safe Electrical Characteristics) Added a table
note to the Input Leakage Current parameterGo
- (I2C Open-Drain, and Fail-Safe Electrical Characteristics) Separated the
Input Leakage Current Test Conditions into two rowsGo
- (Fail-Safe Reset Electrical Characteristics) Added a table note to the Input
Leakage Current parameterGo
- (Fail-Safe Reset Electrical Characteristics) Separated the Input Leakage
Current Test Conditions into two rowsGo
- (High-Frequency Oscillator Electrical Characteristics) Added a table
note to the Input Leakage Current parameterGo
- (High-Frequency Oscillator Electrical Characteristics) Separated the
Input Leakage Current Test Conditions into two rowsGo
- (eMMCPHY Electrical Characteristics) Added a table note to the Input
Leakage Current parameterGo
- (eMMCPHY Electrical Characteristics) Separated the Input Leakage
Current Test Conditions into two rowsGo
- (SDIO Electrical Characteristics) Added a table note to the Input
Leakage Current parameterGo
- (SDIO Electrical Characteristics) Separated the Input Leakage
Current Test Conditions into two rowsGo
- (LVCMOS Electrical Characteristics) Added a table note to the Input Leakage
Current parameterGo
- (LVCMOS Electrical Characteristics) Separated the Input Leakage Current Test
Conditions into two rowsGo
- (ADC12B Electrical Characteristics) Added a table note to the
General Purpose Input Leakage Current parameterGo
- (ADC12B Electrical Characteristics) Separated the Input Leakage
Current Test Conditions into two rowsGo
- (Recommended Operating Conditions for OTP eFuse Programming):
Removed the OPP NOM (BOOT) reference from the VDD_CORE parameter description,
and changed the VPP Slew Rate description to clarify it only applies to
power-upGo
- (Impact to Your Hardware Warranty): Updated/Changed the "Consequently, TI will have no …" sentence in the paragraphGo
- (Thermal Resistance Characteristics): Added NoteGo
- (Temperature Sensor Characteristics): Added new section to define
Voltage and Temperature Module (VTM) on die temperature sensor
characteristicsGo
- (Timing and Switching Characteristics): Added a note explaining that
the default PADCONFIG slew rate and drive strength settings must be used to
ensure the timing values given in this section are valid.Go
- (Power-Up Sequencing): Added note to clarify power rails must decay
below 300mv before initiating a new power-up sequenceGo
- (Power-Up Sequencing): Added Power-Up Sequencing – Supply / Signal
Assignments table with waveform references and notes. Removed VDDSHV5 references
from Note 3 and Note 5 since this power rail is described in Note 7. Added new
Note 12 and updated Note 9 and Note 10 to clarify the VDDA_CORE_USB0,
VDDA_DDR_PLL0, VDD_MMC0, VDDA_0P85_DLL_MMC0, and VDDR_CORE power rails are
expected to be powered by the same 0.85V sourceGo
- (Power-Down Sequencing): Added note to clarify power rails must decay below
300mv before initiating a new power-up sequenceGo
- (Power-Down Sequencing): Added Power-Down Sequencing – Supply / Signal
Assignments table with waveform references and notes. Removed VDDSHV5 references from Note
1 and Note 2 since this power rail is described in Note 3. Updated the Power-Down
Sequencing diagram to show it is possible for the system power to remain turned on while
the device power management solution is turned off, and also show it is possible for
MCU_PORz to be asserted before the supplies begin to sequence offGo
- (BOOTMODE Timing Requirements): Updated the description for
parameters RST23 and RST24Go
- (MCU_OSC0 LVCMOS Digital Clock Source): Updated this section to
include additional notes and the MCU_OSC0 LVCMOS Digital Clock Source
Requirements tableGo
- (PLLs): Updated the PLL names to include its number reference used
in the TRMGo
- (CPSW3G RMII Timing Conditions): Changed the maximum input slew rate for
both operating voltagesGo
- (CPSW3G RGMII Timing Conditions): Added operating voltage conditions
to the Input Slew Rate parameter to allow a relaxed slew rate when operating at
1.8VGo
- (ECAP – Timing Requirements and Switching Characteristics): Updated
the clock source referenced in table note 1Go
- (EPWM – Timing Requirements and Switching Characteristics): Updated
the clock source referenced in table note 1Go
- (EQEP – Timing Requirements): Updated the clock source referenced in
table note 1Go
- (GPIO Timing Conditions): Updated the Input slew rate parameter to
include operating voltage with relaxed minimum values and corrected a
typographical error on the maximum value of the I2C OD FS buffer type operating
at 3.3V. The previous maximum value of 0.8V/ns should have been 0.08V/ns for it
to be equivalent to the maximum value of 8E+7 defined in the Electrical
Characteristics table for the I2C OD FS bufferGo
- (GPIO Timing Requirements): Removed the operating voltage condition
and updated the minimum value for the Pulse width parameter to account for the
relaxed minimum Input slew rate defined in the GPIO Timing Conditions
tableGo
- (I2C Timing): Corrected a typographical error where the value of 0.8
in the description should have been 0.08, which is equivalent to the value of
8E+7 defined in the Electrical Characteristics table for the I2C OD FS
bufferGo
- (I2C Timing): Added a note that describes IOSETs associated with pin
multiplexing of I2C2 signal functionsGo
- (MCSPI Switching Characteristics - Controller Mode): Changed all
instances of MSPI to MCSPI in table notes 2, 3, 4, and 5Go
- (MMC0 DLL Delay Mapping for All Timing Modes): Changed the register
names, added a new column for ENDLL, changed the OTAPDLYENA, SELDLYTXCLK, and
FRQSEL values for Legacy SDR and High Speed SDR, and changed the CLKBUFSEL
values for High Speed DDR and HS200 modesGo
- (HS200 Mode): Added "MMC0 Timing RequirementsGo
- (MMC1 DLL Delay Mapping for All Timing Modes): Changed the register
name, changed the OTAPDLYENA and OTAPDLYSEL values for Default Speed and High
Speed modes, and removed the CLKBUFSEL column because this register bit field
doesn't provide any functionGo
- (OSPI0 DLL Delay Mapping for PHY Data Training): Added a delay value
for the "PHY_MASTER_PHASE_DETECT_SELECTOR_FLD" register bit
fieldGo
- (OSPI Switching Characteristics – PHY Data Training): Corrected the
formulas associated with timing parameter O5Go
- (OSPI0 DLL Delay Mapping for PHY SDR Timing Modes): Added a delay
value for the "PHY_MASTER_PHASE_DETECT_SELECTOR_FLD" register bit
fieldGo
- (OSPI0 Switching Characteristics – PHY SDR Mode): Corrected the
formulas associated with timing parameters O10 and O11Go
- (OSPI0 DLL Delay Mapping for PHY DDR Timing Modes): Added a delay
value for the "PHY_MASTER_PHASE_DETECT_SELECTOR_FLD" register bit
fieldGo
- (OSPI0 Switching Characteristics – PHY DDR Mode): Corrected the
formulas associated with timing parameters O4 and O5Go
- (PRU_ICSSG PRU Timing Requirements – Sigma Delta Mode): Updated the
description for parameter PRSD4Go
- (Power Supply Designs): Updated to reflect the latest power supply
design guidelinesGo
- (Device Naming Convention): Updated the description for Feature code "E" to
clarify support for hardware auto-forwarding feature required by some Ethernet
protocolsGo
- (Device Naming Convention): Added the 125°C Industrial temperature
rangeGo
- (Tools and Software): Added clarification regarding the SysConfig
featuresGo