SLUSBH2G March 2013 – March 2019
To prevent rechargeable batteries from being deeply discharged and damaged, and to prevent completely depleting charge from a capacitive storage element, the boost charger has an internally set undervoltage (VBAT_UV) threshold plus an internal hysteresis voltage (VBAT_UV_HYST). The VBAT_UV threshold voltage when the battery voltage is decreasing is internally set to 1.95V (typical). The undervoltage threshold when battery voltage is increasing is given by VBAT_UV plus VBAT_UV_HYST. For the VBAT_UV feature to function properly, the system load should be connected to the VSTOR pin while the storage element should be connected to the VBAT pin. Once the VSTOR pin voltage goes above VBAT_UV plus VBAT_UV_HYST threshold, the VSTOR pin and the VBAT pins are effectively shorted through an internal PMOS FET. The switch remains closed until the VSTOR pin voltage falls below the VBAT_UV threshold. The VBAT_UV threshold should be considered a fail safe to the system and the system load should be removed or reduced based on the VBAT_OK threshold which should be set above the VBAT_UV threshold.