SLUSE97 November   2023 BQ76905

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Supply Current
    6. 6.6  Digital I/O
    7. 6.7  REGOUT LDO
    8. 6.8  Voltage References
    9. 6.9  Coulomb Counter
    10. 6.10 Coulomb Counter Digital Filter
    11. 6.11 Current Wake Detector
    12. 6.12 Analog-to-Digital Converter
    13. 6.13 Cell Balancing
    14. 6.14 Internal Temperature Sensor
    15. 6.15 Thermistor Measurement
    16. 6.16 Hardware Overtemperature Detector
    17. 6.17 Internal Oscillator
    18. 6.18 Charge and Discharge FET Drivers
    19. 6.19 Comparator-Based Protection Subsystem
    20. 6.20 Timing Requirements—I2C Interface, 100-kHz Mode
    21. 6.21 Timing Requirements—I2C Interface, 400-kHz Mode
    22. 6.22 Timing Diagram
    23. 6.23 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Configuration
      1. 7.3.1 Commands and Subcommands
      2. 7.3.2 Configuration Using OTP or Registers
      3. 7.3.3 Device Security
    4. 7.4 Device Hardware Features
      1. 7.4.1  Voltage ADC
      2. 7.4.2  Coulomb Counter and Digital Filters
      3. 7.4.3  Protection FET Drivers
      4. 7.4.4  Voltage References
      5. 7.4.5  Multiplexer
      6. 7.4.6  LDOs
      7. 7.4.7  Standalone Versus Host Interface
      8. 7.4.8  ALERT Pin Operation
      9. 7.4.9  Low Frequency Oscillator
      10. 7.4.10 I2C Serial Communications Interface
    5. 7.5 Measurement Subsystem
      1. 7.5.1 Voltage Measurement
        1. 7.5.1.1 Voltage ADC Scheduling
        2. 7.5.1.2 Unused VC Pins
        3. 7.5.1.3 General Purpose ADCIN Functionality
      2. 7.5.2 Current Measurement and Charge Integration
      3. 7.5.3 Internal Temperature Measurement
      4. 7.5.4 Thermistor Temperature Measurement
      5. 7.5.5 Factory Trim and Calibration
    6. 7.6 Protection Subsystem
      1. 7.6.1 Protections Overview
      2. 7.6.2 Primary Protections
      3. 7.6.3 CHG Detector
      4. 7.6.4 Cell Open-Wire Protection
      5. 7.6.5 Diagnostic Checks
    7. 7.7 Cell Balancing
    8. 7.8 Device Operational Modes
      1. 7.8.1 Overview of Operational Modes
      2. 7.8.2 NORMAL Mode
      3. 7.8.3 SLEEP Mode
      4. 7.8.4 DEEPSLEEP Mode
      5. 7.8.5 SHUTDOWN Mode
      6. 7.8.6 CONFIG_UPDATE Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Performance Plot
      4. 8.2.4 Random Cell Connection Support
      5. 8.2.5 Startup Timing
      6. 8.2.6 FET Driver Turn-Off
      7. 8.2.7 Usage of Unused Pins
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.11 Current Wake Detector

Typical values stated where TA = 25°C and VBAT = 18.5 V, min/max values stated where TA = -40°C to 110°C and VBAT = 3 V to 27.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 1, positive threshold (charging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise 186 271 355 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 2, positive threshold (charging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise 670 794 921 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 3, positive threshold (charging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise 1145 1317 1503 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 4, positive threshold (charging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise 1594 1838 2089 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 5, positive threshold (charging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise 2056 2364 2676 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 6, positive threshold (charging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise 2516 2890 3276 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 7, positive threshold (charging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise 3000 3419 3851 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 8, positive threshold (charging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise 3460 3942 4443 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 9, positive threshold (charging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise 3893 4466 5045 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 10, positive threshold (charging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise 4386 4994 5627 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 1, positive threshold (charging current) (1) TA = –40°C to 110°C.  Measured using averaged data to remove effects of noise 88 275 462 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 2, positive threshold (charging current) (1) TA = –40°C to 110°C.  Measured using averaged data to remove effects of noise 581 794 978 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 3, positive threshold (charging current) (1) TA = –40°C to 110°C.  Measured using averaged data to remove effects of noise 1050 1317 1537 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 4, positive threshold (charging current) (1) TA = –40°C to 110°C.  Measured using averaged data to remove effects of noise 1527 1836 2106 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 5, positive threshold (charging current) (1) TA = –40°C to 110°C.  Measured using averaged data to remove effects of noise 1974 2360 2711 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 6, positive threshold (charging current) (1) TA = –40°C to 110°C.  Measured using averaged data to remove effects of noise 2483 2885 3290 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 7, positive threshold (charging current) (1) TA = –40°C to 110°C.  Measured using averaged data to remove effects of noise 2897 3412 3885 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 8, positive threshold (charging current) (1) TA = –40°C to 110°C.  Measured using averaged data to remove effects of noise 3357 3933 4498 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 9, positive threshold (charging current) (1) TA = –40°C to 110°C.  Measured using averaged data to remove effects of noise. 3793 4458 5062 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 10, positive threshold (charging current) (1) TA = –40°C to 110°C.  Measured using averaged data to remove effects of noise. 4261 4986 5654 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 1, negative threshold (discharging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise -719 -635 -546 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 2, negative threshold (discharging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise -1234 -1118 -1005 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 3, negative threshold (discharging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise -1736 -1605 -1469 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 4, negative threshold (discharging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise -2262 -2088 -1917 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 5, negative threshold (discharging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise -2794 -2579 -2354 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 6, negative threshold (discharging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise -3324 -3067 -2805 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 7, negative threshold (discharging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise -3849 -3552 -3245 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 8, negative threshold (discharging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise -4369 -4037 -3704 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 9, negative threshold (discharging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise -4913 -4527 -4129 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 10, negative threshold (discharging current) (1) TA = –20°C to 65°C.  Measured using averaged data to remove effects of noise -5425 -5012 -4577 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 1, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise -862 -630 -369 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 2, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise -1340 -1113 -865 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 3, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise -1887 -1600 -1284 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 4, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise -2387 -2087 -1765 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 5, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise -2949 -2575 -2179 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 6, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise -3487 -3064 -2622 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 7, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise -3991 -3548 -3083 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 8, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise -4599 -4033 -3420 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 9, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise -5067 -4521 -3918 µV
VWAKE_THR Wakeup voltage threshold (VSRP – VSRN), setting = 10, negative threshold (discharging current) (1) TA = -40°C to 110°C.  Measured using averaged data to remove effects of noise -5580 -5011 -4415 µV
tWAKE Measurement interval 2.44 ms
(1) Specified by a combination of characterization and production test