SLVSFJ1C November 2021 – August 2022 DRV8245-Q1
PRODMIX
Measured at VVM = 13.5 V
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RHS_ON | High-side FET on resistance, HTSSOP package | IOUT = 6 A, TJ = 25°C | 20 | mΩ | ||
IOUT = 6 A, TJ = 150°C | 38 | mΩ | ||||
High-side FET on resistance, VQFN-HR package | IOUT = 6 A, TJ = 25°C | 15.6 | mΩ | |||
IOUT = 6 A, TJ = 150°C | 30.4 | mΩ | ||||
RLS_ON | Low-side FET on resistance, HTSSOP package | IOUT = 6 A, TJ = 25°C | 20 | mΩ | ||
IOUT = 6 A, TJ = 150°C | 38 | mΩ | ||||
Low-side FET on resistance, VQFN-HR package | IOUT = 6 A, TJ = 25°C | 15.2 | mΩ | |||
IOUT = 6 A, TJ = 150°C | 30.4 | mΩ | ||||
VSD | Low-side & High-side FET source-drain voltage when body diode is forward biased | IOUT = +/- 6 A (both directions) | 0.4 | 0.9 | 1.5 | V |
RHi-Z | OUT resistance to GND in SLEEP or STANDBY state | VOUTx = VVM = 13.5 V | 0.9 | 5.63 | KΩ |