The DRV835x family of devices integrates three, half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The VCP doubler charge pump provides the correct gate bias voltage to the high-side MOSFET across a wide operating voltage range in addition to providing 100% duty-cycle support. The internal VGLS linear regulator provides the gate-bias voltage for the low-side MOSFETs. The half-bridge gate drivers can be used in combination to drive a three-phase motor or separately to drive other types of loads.
The DRV835x family of devices implement a smart gate-drive architecture which allows the user to dynamically adjust the gate drive current without requiring external gate current limiting resistors. Additionally, this architecture provides a variety of protection features for the external MOSFETs including automatic dead-time insertion, parasitic dV/dt gate turnon prevention, and gate-fault detection.