SLVSD19A June   2015  – July 2015 DRV8881

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      DRV8881E Simplified System Diagram
      2.      DRV8881P Simplified System Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
    2.     DRV8881E PH/EN Pin Functions
    3.     DRV8881P PWM Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1  Motor Driver Current Ratings
        1. 7.3.1.1 Peak Current Rating
        2. 7.3.1.2 RMS Current Rating
        3. 7.3.1.3 Full-Scale Current Rating
      2. 7.3.2  PWM Motor Drivers
      3. 7.3.3  Bridge Control
      4. 7.3.4  Current Regulation
      5. 7.3.5  Decay Modes
        1. 7.3.5.1 Mode 1: Slow Decay
        2. 7.3.5.2 Mode 2: Fast Decay
        3. 7.3.5.3 Mode 3: 30%/70% Mixed Decay
      6. 7.3.6  Smart tune
      7. 7.3.7  Adaptive Blanking Time
      8. 7.3.8  Parallel Mode
      9. 7.3.9  Charge Pump
      10. 7.3.10 LDO Voltage Regulator
      11. 7.3.11 Logic and Tri-Level Pin Diagrams
      12. 7.3.12 Protection Circuits
        1. 7.3.12.1 VM Undervoltage Lockout (UVLO)
        2. 7.3.12.2 VCP UVLO (CPUV)
        3. 7.3.12.3 Overcurrent Protection (OCP)
        4. 7.3.12.4 Thermal Shutdown (TSD)
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 DRV8881P Typical Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Current Regulation
          2. 8.2.1.2.2 Stepper Motor Speed
          3. 8.2.1.2.3 Decay Modes
          4. 8.2.1.2.4 Sense Resistor
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Alternate Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Current Regulation
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.1 Absolute Maximum Ratings

over operating free-air temperature range referenced with respect to GND (unless otherwise noted) (1)
MIN MAX UNIT
Power supply voltage (VM) –0.3 50 V
Power supply voltage ramp rate (VM) 0 2 V/µs
Charge pump voltage (VCP, CPH) –0.3 VM + 12 V
Charge pump negative switching pin (CPL) –0.3 VM V
Internal regulator voltage (V3P3) –0.3 3.8 V
Internal regulator current output (V3P3) 0 10 mA
Control pin voltage (APH, AEN, BPH, BEN, AIN1, AIN2, BIN1, BIN2, nSLEEP, nFAULT, ADECAY, BDECAY, TRQ0, TRQ1, ATE, PARA) –0.3 7.0 V
Open drain output current (nFAULT) 0 10 mA
Reference input pin voltage (AVREF, BVREF) –0.3 V3P3 + 0.5 V
Continuous phase node pin voltage (AOUT1, AOUT2, BOUT1, BOUT2) –0.7 VM + 0.7 V
Continuous shunt amplifier input pin voltage (AISEN, BISEN) (2) –0.55 0.55 V
Peak drive current (AOUT1, AOUT2, BOUT1, BOUT2, AISEN, BISEN) Internally limited A
Operating junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Transients of ±1 V for less than 25 ns are acceptable