SNVS032E February   2000  – January 2016 LM2651

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Capacitor
        2. 8.2.2.2 Inductor
        3. 8.2.2.3 Output Capacitor
        4. 8.2.2.4 Boost Capacitor
        5. 8.2.2.5 Soft-Start Capacitor
        6. 8.2.2.6 R1 and R2 (Programming Output Voltage)
        7. 8.2.2.7 Compensation Components
        8. 8.2.2.8 External Schottky Diode
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Input voltage 15 V
Feedback pin voltage −0.4 5 V
Power dissipation (TA = 25°C)(3) 893 mW
Junction temperature, TJ −40 125 °C
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) The maximum allowable power dissipation is calculated by using PDmax = (TJmax – TA) / θJA , where TJmax is the maximum junction temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance of the specified package. The 893-mW rating results from using 150°C, 25°C, and 140°C/W for TJmax, TA, and θJA respectively. A θJA of 140°C/W represents the worst-case condition of no heat sinking of the 16-pin TSSOP package. Heat sinking allows the safe dissipation of more power. The absolute maximum power dissipation must be derated by 7.1 4 mW per °C above 25°C ambient. The LM2651 actively limits its junction temperature to about 165°C.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Supply voltage 4 14 V

6.4 Thermal Information

THERMAL METRIC(1) LM2651 UNIT
PW (TSSOP)
16 PINS
RθJA Junction-to-ambient thermal resistance 97.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 29.9 °C/W
RθJB Junction-to-board thermal resistance 43.1 °C/W
ψJT Junction-to-top characterization parameter 1.8 °C/W
ψJB Junction-to-board characterization parameter 42.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

specifications are TJ = 25°C and VIN = 10 V (unless otherwise specified)(1)
PARAMETER TEST CONDITIONS MIN TYP(2) MAX UNIT
LM2651-1.8
VOUT Output voltage ILOAD = 900 mA TJ = 25°C 1.761 1.8 1.836 V
Over full operating junction temperature range 1.719 1.854
Output voltage line regulation VIN = 4 V to 14 V, ILOAD = 900 mA 0.2%
Output voltage load regulation ILOAD = 10 mA to 1.5 A, VIN = 5 V 1.3%
ILOAD = 200 mA to 1.5 A, VIN = 5 V 0.3%
VHYST Sleep mode output voltage hysteresis 35 mV
LM2651-2.5
VOUT Output voltage ILOAD = 900 mA TJ = 25°C 2.43 2.5 2.574 V
Over full operating junction temperature range 2.388 2.575
Output voltage line regulation VIN = 4 V to 12 V, ILOAD = 900 mA 0.2%
Output voltage load regulation ILOAD = 10 mA to 1.5 A, VIN = 5 V 1.3%
ILOAD = 200 mA to 1.5 A, VIN = 5 V 0.3%
VHYST Sleep mode output voltage hysteresis 48 mV
LM2651-3.3
VOUT Output voltage ILOAD = 900 mA TJ = 25°C 3.265 3.3 3.379 V
Over full operating junction temperature range 3.201 3.399
Output voltage line regulation VIN = 4 V to 14 V, ILOAD = 900 mA 0.2%
Output voltage load regulation ILOAD = 10 mA to 1.5 A, VIN = 5 V 1.3%
ILOAD = 200 mA to 1.5 A, VIN = 5 V 0.3%
VHYST Sleep mode output voltage hysteresis 60 mV
LM2651-ADJ(3)
VFB Feedback voltage ILOAD = 900 mA TJ = 25°C 1.238 V
Over full operating junction temperature range 1.2 1.263
VOUT Output voltage line regulation VIN = 4 V to 14 V, ILOAD = 900 mA 0.2%
Output voltage load regulation ILOAD = 10 mA to 1.5 A, VIN = 5 V 1.3%
ILOAD = 200 mA to 1.5 A, VIN = 5 V 0.3%
VHYST Sleep mode output voltage hysteresis 24 mV
ALL OUTPUT VOLTAGE VERSIONS
IQ Quiescent current TJ = 25°C 1.6 mA
Over full operating junction temperature range 2
IQSD Quiescent current in shutdown mode Shutdown pin pulled low TJ = 25°C 7 12 µA
Over full operating junction temperature range 20
RSW(ON) High-Side or low-side switch on resistance (MOSFET on resistance + bonding wire resistance) ISWITCH = 1 A 110 mΩ
RDS(ON) MOSFET on resistance (high-side or low-side) ISWITCH = 1 A TJ = 25°C 75 mΩ
Over full operating junction temperature range 130
IL Switch leakage current - high side 130 nA
Switch leakage current - low side 130
VBOOT Bootstrap regulator voltage IBOOT = 1 mA TJ = 25°C 6.45 6.75   6.95 V
Over full operating junction temperature range 6.4 7
GM Error amplifier transconductance 1250 µmho
VINUV VIN undervoltage lockout threshold voltage Rising edge TJ = 25°C 3.8 V
Over full operating junction temperature range 3.95
VUV-HYST Hysteresis for the undervoltage lockout 210 mV
ICL Switch current limit VIN = 5 V TJ = 25°C 2   A
Over full operating junction temperature range 1.55 2.6
ISM Sleep mode threshold current VIN = 5 V 100 mA
AV Error amplifier voltage gain 100 V/V
IEA_SOURCE Error amplifier source current TJ = 25°C 25 40   µA
Over full operating junction temperature range 15
IEA_SINK Error amplifier sink current TJ = 25°C 65   µA
Over full operating junction temperature range 30
VEAH Error amplifier output swing upper limit TJ = 25°C 2.5 2.7   V
Over full operating junction temperature range 2.4
VEAL Error amplifier output swing lower limit TJ = 25°C 1.25   1.35 V
Over full operating junction temperature range 1.5
VD Body diode voltage IDIODE = 1.5 A 1 V
fOSC Oscillator frequency VIN = 4 V TJ = 25°C 280 300   330 kHz
Over full operating junction temperature range 255 345
DMAX Maximum duty cycle VIN = 4 V TJ = 25°C 95%  
Over full operating junction temperature range 92%
ISS Soft-Start current Voltage at the SS pin = 1.4 V TJ = 25°C 11   µA
Over full operating junction temperature range 7 14
ISHUTDOWN Shutdown pin current Shutdown pin pulled low TJ = 25°C 0.8 2.2   3.7 µA
Over full operating junction temperature range 0.5 4
vSHUTDOWN Shutdown pin threshold voltage Falling edge TJ = 25°C 0.6   V
Over full operating junction temperature range 0.3 0.9
TSD Thermal shutdown temperature 165 °C
TSD_HYST Thermal shutdown hysteresis temperature 25 °C
(1) All limits are ensured at room temperature (standard typeface) and at temperature extremes. All room temperature limits are 100% production tested. All limits at temperature extremes are specified via correlation using standard Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).
(2) Typical numbers are at 25°C and represent the most likely norm.
(3) VOUT = 2.5 V

6.6 Typical Characteristics

LM2651 10092505.gif Figure 1. IQ vs Input Voltage
LM2651 10092507.gif Figure 3. IQSD vs Junction Temperature
LM2651 10092509.gif Figure 5. RDS(ON) vs Input Voltage
LM2651 10092511.gif Figure 7. Current Limit vs Input Voltage
(VOUT = 2.5 V)
LM2651 10092513.gif Figure 9. Current Limit vs Junction Temperature
(VOUT = 3.3 V)
LM2651 10092506.gif Figure 2. IQSD vs Input Voltage
LM2651 10092508.gif Figure 4. Frequency vs Junction Temperature
LM2651 10092510.gif Figure 6. RDS(ON) vs Junction Temperature
LM2651 10092512.gif Figure 8. Current Limit vs Junction Temperature
(VOUT = 2.5 V)
LM2651 10092514.gif Figure 10. Current Limit vs Input Voltage
(VOUT = 3.3 V)