SNVSBW1B December 2021 – October 2023 LM63460-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY VOLTAGE AND CURRENT | ||||||
VIN_OPERATE | Input operating voltage(1) | Needed to start up | 3.95 | V | ||
Once operating | 3.0 | |||||
VIN_OPERATE_H | Hysteresis(1) | 1 | V | |||
IQ_VIN | Operating quiescent current (not switching)(2) | VFB = +5%, VBIAS = 5 V, VOUT = 5 V | 9 | 18 | µA | |
IQ | Operating quiescent current (not switching); measured at VIN pin(3) | VFB = +5%, VBIAS = 5 V | 0.6 | 6 | µA | |
IBIAS | Current into BIAS pin (not switching, maximum at TJ = 125°C)(3) | VFB = +5%, VBIAS = 5 V, AUTO mode | 24 | 31.2 | µA | |
ISD | Shutdown quiescent current; measured at VIN pin | VEN = 0 V, TJ = 25°C | 0.6 | 6 | µA | |
ENABLE | ||||||
VEN-TH | Enable input threshold voltage (rising) | 1.263 | V | |||
VEN-ACC | Enable input threshold voltage – rising deviation from typical | –5% | 5% | |||
VEN-HYST | Enable threshold hysteresis as percentage of VEN-TH (typical) | 24% | 28% | 32% | ||
VEN-WAKE | Enable wake-up threshold | 0.4 | V | |||
IEN | Enable pin input current | VIN = VEN = 13.5 V | 2.3 | nA | ||
VEN_SYNC_E | Use this edge height to sync using EN/SYNC pin | Rise/fall time < 30 ns | 2.4 | V | ||
LDO AND VCC | ||||||
VCC | Internal VCC voltage | VBIAS > 3.4 V, CCM operation(1) | 3.3 | V | ||
VBIAS = 3.1 V, non-switching | 3.1 | |||||
VCC-UVLO | Internal VCC undervoltage lockout | VCC rising undervoltage threshold | 3.6 | V | ||
VCC-UVLO-HYST | Internal VCC undervoltage lockout hysteresis | Hysteresis below VCC-UVLO | 1.1 | V | ||
FEEDBACK | ||||||
VFB_acc | Initial reference voltage accuracy | VIN = 3.3 V to 36 V, TJ = 25°C, FPWM mode | –1% | 1% | ||
IFB | Input current from FB to GND | Adjustable versions only, VFB = 1 V | 1 | 50 | nA | |
OSCILLATOR | ||||||
fADJ | Minimum adjustable frequency by RT pin | RRT = 66.5 kΩ | 0.18 | 0.2 | 0.22 | MHz |
Adjustable frequency by RT pin with 400-kHz setting | RRT = 33.2 kΩ | 0.36 | 0.4 | 0.44 | MHz | |
Maximum adjustable frequency by RT pin | RRT = 5.76 kΩ | 1.98 | 2.2 | 2.42 | MHz | |
fS_SS | Frequency span of spread spectrum operation – largest deviation from center frequency | Spread spectrum active | 2% | |||
fPSS | Spread spectrum pattern frequency(1) | Spread spectrum active, fSW = 2.1 MHz | 1.5 | Hz | ||
MOSFETS | ||||||
RDS(on)HS | Power switch on-resistance | High-side MOSFET RDS(on) | 41 | 82 | mΩ | |
RDS(on)LS | Power switch on-resistance | Low-side MOSFET RDS(on) | 21 | 45 | mΩ | |
VBOOT-UVLO | Voltage on CBOOT relative to SW that turns off the high-side switch | 2.1 | V | |||
CURRENT LIMITS | ||||||
IL-HS | High-side switch current limit(4) | Duty cycle approaches 0% | 8.9 | 10.3 | 11.5 | A |
IL-LS | Low-side switch current limit | 6.1 | 7.1 | 8.1 | A | |
IL-ZC | Zero-cross current limit. Positive current direction is out of the SW pin | AUTO mode, static measurement | 0.25 | A | ||
IL-NEG | Negative current limit. Positive current direction is out of the SW pin | FPWM operation | –3 | A | ||
IPK_MIN_0 | Minimum peak command in AUTO mode / device current rating | Pulse duration < 100 ns | 25% | |||
IPK_MIN_100 | Minimum peak command in AUTO mode / device current rating | Pulse duration > 1 µs | 12.5% | |||
VHICCUP | Ratio of FB voltage to in-regulation FB voltage | Hiccup disabled during soft start | 40% | |||
POWER GOOD | ||||||
PGDOV | PGOOD upper threshold – rising | % of VOUT setting | 105% | 107% | 110% | |
PGDUV | PGOOD lower threshold – falling | % of VOUT setting | 92% | 94% | 96.5% | |
PGDHYST | PGOOD hysteresis | % of VOUT setting | 1.3% | |||
VIN(PGD-VALID) | Input voltage for proper PGOOD function | 1.0 | V | |||
VPGD(LOW) | Low-level PGOOD function output voltage | 46-µA pullup to PGOOD, VIN = 1 V, VEN = 0 V | 0.4 | V | ||
1-mA pullup to PGOOD, VEN = 0 V | 0.4 | |||||
2-mA pullup to PGOOD, VEN = 3.3 V | 0.4 | |||||
RPGD | RDS(on) of PGOOD output | 1-mA pullup to PGOOD, VEN = 0 V | 17 | 40 | Ω | |
1-mA pullup to PGOOD, VEN = 3.3 V | 40 | 90 | Ω | |||
IOV | Pulldown current at the SW node in an overvoltage condition | 0.5 | mA | |||
THERMAL SHUTDOWN | ||||||
TSHD | Thermal shutdown rising threshold(1) | 158 | 168 | 180 | ℃ | |
TSHD-HYS | Thermal shutdown hysteresis(1) | 10 | ℃ |