SNOSDE6C December   2022  – August 2025 LM74900-Q1 , LM74910-Q1 , LM74910H-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump
      2. 8.3.2 Dual Gate Control (DGATE, HGATE)
        1. 8.3.2.1 Reverse Battery Protection (A, C, DGATE)
        2. 8.3.2.2 Load Disconnect Switch Control (HGATE, OUT)
      3. 8.3.3 Overcurrent Protection (CS+, CS-, ILIM, IMON, TMR)
        1. 8.3.3.1 Pulse Overload Protection, Circuit Breaker
        2. 8.3.3.2 Overcurrent Protection With Latch-Off
        3. 8.3.3.3 Short Circuit Protection (ISCP)
        4. 8.3.3.4 Analog Current Monitor Output (IMON)
      4. 8.3.4 Undervoltage Protection, Overvoltage Protection, and Battery Voltage Sensing (UVLO, OV, SW)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Ultra Low IQ Shutdown (EN)
      2. 8.4.2 Low IQ SLEEP Mode (SLEEP)
  10. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical 12V Reverse Battery Protection Application
      1. 9.2.1 Design Requirements for 12V Battery Protection
      2. 9.2.2 Automotive Reverse Battery Protection
        1. 9.2.2.1 Input Transient Protection: ISO 7637-2 Pulse 1
        2. 9.2.2.2 AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
        3. 9.2.2.3 Input Micro-Short Protection: LV124 E-10
      3. 9.2.3 Detailed Design Procedure
        1. 9.2.3.1 Design Considerations
        2. 9.2.3.2 Charge Pump Capacitance VCAP
        3. 9.2.3.3 Input and Output Capacitance
        4. 9.2.3.4 Hold-Up Capacitance
        5. 9.2.3.5 Selection of Current Sense Resistor, RSNS
        6. 9.2.3.6 Selection of Scaling Resistor (RSET) and Short-Circuit Protection Setting Resistor (RSCP)
        7. 9.2.3.7 Overcurrent Limit (ILIM), Circuit Breaker Timer (TMR), and Current Monitoring Output (IMON) Selection
        8. 9.2.3.8 Overvoltage Protection and Battery Monitor
      4. 9.2.4 MOSFET Selection: Blocking MOSFET Q1
      5. 9.2.5 MOSFET Selection: Hot-Swap MOSFET Q2
      6. 9.2.6 TVS Selection
      7. 9.2.7 Application Curves
    3. 9.3 Addressing Automotive Input Reverse Battery Protection Topologies With LM749x0-Q1
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Transient Protection
      2. 9.4.2 TVS Selection for 12V Battery Systems
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGE|24
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.4.2 Low IQ SLEEP Mode (SLEEP)

The LM749x0-Q1 supports low IQ SLEEP mode operation. This mode can be enabled by pulling SLEEP pin low (EN = High). In SLEEP mode, device turns off internal charge pump, SW switch and disables DGATE and HGATE drive thus achieving low current consumption of 6μA typical. However at the same time device power up always on loads connected on OUT pin through an internal low power MOSFET with typical on resistance of 7Ω. In this mode device can support peak load current of 100mA. As load is increased, voltage drop across internal MOSFET increases. Device offers overcurrent protection during sleep mode with typical overcurrent threshold of 250mA. For LM74900-Q1 and LM74910H-Q1, in case of overcurrent event during sleep mode, device protects internal FET by disconnecting the internal MOSFET switch and latching off the device.

For LM74910H-Q1, an overcurrent event in SLEEP mode triggers a transition into normal mode of operation for 64 timer cycles during which the device draws quiescent current I(Q). When the device enters normal mode for 64 timer cycles, the charge pump , DGATE and HGATE are enabled allowing the load current to flow through the external FETs. After the end of 64 timer cycles, the device goes back to SLEEP mode from normal mode. This auto-retry feature allows the LM74910H-Q1 device to startup into SLEEP mode and pass transient load current which are greater than SLEEP overcurrent threshold without latching off the device.

As an additional layer of protection, device also features thermal shutdown with latch off feature in SLEEP mode in case of any overheating of the device in SLEEP mode. To put the device out of the latch mode user has to toggle the SLEEP or EN pin.

In SLEEP mode the LM749x0-Q1 offers protection against input overvoltage events. Device can be configured in either overvoltage cut-off (SLEEP_OV connected to C) or overvoltage clamp mode (SLEEP_OV connected to VOUT) with default overvoltage threshold of 21V typical.

If SLEEP mode feature is not required then SLEEP pin should be tied to EN. When not used SLEEP_OV pin can be left floating.

LM74900-Q1 LM74910-Q1 LM74910H-Q1 LM749x0-Q1 SLEEP Mode OperationFigure 8-10 LM749x0-Q1 SLEEP Mode Operation

A higher overvoltage threshold for SLEEP mode can be achieved by adding an external Zener diode between SLEEP_OV pin to OUT/C as shown in Figure 8-11. This feature is useful while configuring overvoltage threshold for 24V or 48V powered systems.

LM74900-Q1 LM74910-Q1 LM74910H-Q1 Increasing SLEEP_OV Threshold Using an External Zener DiodeFigure 8-11 Increasing SLEEP_OV Threshold Using an External Zener Diode