SNOSDE6C December   2022  – August 2025 LM74900-Q1 , LM74910-Q1 , LM74910H-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump
      2. 8.3.2 Dual Gate Control (DGATE, HGATE)
        1. 8.3.2.1 Reverse Battery Protection (A, C, DGATE)
        2. 8.3.2.2 Load Disconnect Switch Control (HGATE, OUT)
      3. 8.3.3 Overcurrent Protection (CS+, CS-, ILIM, IMON, TMR)
        1. 8.3.3.1 Pulse Overload Protection, Circuit Breaker
        2. 8.3.3.2 Overcurrent Protection With Latch-Off
        3. 8.3.3.3 Short Circuit Protection (ISCP)
        4. 8.3.3.4 Analog Current Monitor Output (IMON)
      4. 8.3.4 Undervoltage Protection, Overvoltage Protection, and Battery Voltage Sensing (UVLO, OV, SW)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Ultra Low IQ Shutdown (EN)
      2. 8.4.2 Low IQ SLEEP Mode (SLEEP)
  10. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical 12V Reverse Battery Protection Application
      1. 9.2.1 Design Requirements for 12V Battery Protection
      2. 9.2.2 Automotive Reverse Battery Protection
        1. 9.2.2.1 Input Transient Protection: ISO 7637-2 Pulse 1
        2. 9.2.2.2 AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
        3. 9.2.2.3 Input Micro-Short Protection: LV124 E-10
      3. 9.2.3 Detailed Design Procedure
        1. 9.2.3.1 Design Considerations
        2. 9.2.3.2 Charge Pump Capacitance VCAP
        3. 9.2.3.3 Input and Output Capacitance
        4. 9.2.3.4 Hold-Up Capacitance
        5. 9.2.3.5 Selection of Current Sense Resistor, RSNS
        6. 9.2.3.6 Selection of Scaling Resistor (RSET) and Short-Circuit Protection Setting Resistor (RSCP)
        7. 9.2.3.7 Overcurrent Limit (ILIM), Circuit Breaker Timer (TMR), and Current Monitoring Output (IMON) Selection
        8. 9.2.3.8 Overvoltage Protection and Battery Monitor
      4. 9.2.4 MOSFET Selection: Blocking MOSFET Q1
      5. 9.2.5 MOSFET Selection: Hot-Swap MOSFET Q2
      6. 9.2.6 TVS Selection
      7. 9.2.7 Application Curves
    3. 9.3 Addressing Automotive Input Reverse Battery Protection Topologies With LM749x0-Q1
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Transient Protection
      2. 9.4.2 TVS Selection for 12V Battery Systems
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGE|24
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2.3 Input Micro-Short Protection: LV124 E-10

E-10 test specified in LV124 standard checks for immunity of electronic modules to short interruptions in power supply input due to contact issues or relay bounce. During this test (case 2), micro-short is applied on the input for a duration as low as 10µs to several ms. For a functional pass status A, electronic modules are required to run uninterrupted during the E-10 test (case 2) with 100µs duration. Dual-Gate drive architecture of LM749x0-Q1, DGATE and HGATE, enables to achieve a functional pass status A with optimum hold up capacitance on the output when compared to a single gate drive controller. When input micro-short is applied for 100µs, LM749x0-Q1 quickly turns off MOSFET Q1 by shorting DGATE to ANODE (source of MOSFET) within 0.5µs to prevent the output from discharging and the HGATE remains ON keeping MOSFET Q2 ON, enabling fast recovery after the input short is removed.

Performance of LM749x0-Q1 during E10 input power supply interruption test case 2 is shown in Figure 10-4. After the input short is removed, input voltage recovers and VAC voltage crosses forward turn on threshold (VAC_FWD), MOSFET Q1 is turned back ON quickly. Note that dual-gate drive topology allows MOSFET Q2 to remain ON during the test and helps in restoring the input power faster. Output voltage remains unperturbed during the entire duration, achieving functional status A.

LM74900-Q1 LM74910-Q1 LM74910H-Q1 Input Micro-Short – LV124 E10 TC 2 100µs Figure 9-5 Input Micro-Short – LV124 E10 TC 2 100µs