SNWS014D March   2004  – June 2025 LMV242 , LMV2421

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Electrical Characteristics for 2.6V
    4. 5.4 Electrical Characteristics for 5V
    5. 5.5 Timing Diagram
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Functional Block Diagram
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Power-Control Principles
      2. 7.1.2 Power Amplifier Controlled Loop
        1. 7.1.2.1 General Overview
        2. 7.1.2.2 Typical PA Closed Loop Control Setup
          1. 7.1.2.2.1 Power Control Over Wide Dynamic Range
      3. 7.1.3 Attenuation Between the Coupler and LMV242x Detector
      4. 7.1.4 Control of the LMV242x
        1. 7.1.4.1 VRAMP Signal
        2. 7.1.4.2 Transmit Enable
        3. 7.1.4.3 Band Select (LMV242 Only)
        4. 7.1.4.4 Analog Output
      5. 7.1.5 Frequency Compensation
    2. 7.2 Typical Application
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • NGY|10
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.3 Electrical Characteristics for 2.6V

all limits specified to TJ = 25°C and VDD = 2.6V (unless otherwise noted); boldface limits apply at temperature extremes (1)
PARAMETERCONDITIONMINTYPMAXUNITS
IDDSupply currentVOUT = (VDD – GND) / 26.99
12		mA
In shutdown (TX_EN = 0V)
VOUT = (VDD – GND) / 2		0.230µA
VHIGHLogic level to enable powerSee (2)1.8V
VLOWLogic level to disable powerSee (2)0.8V
TONTurn-on time from shutdown3.66μs
IEN, IBSCurrent into TX_EN and BS pin0.035µA
RAMP AMPLIFIER
VRDVRAMP deadband155206265mV
1/RRAMPTransconductanceSee(3)7096120µA/V
IOUT RAMPRamp amplifier output currentVRAMP = 2V100162µA
RF INPUT
PINRF input power range (4)20kΩ || 68pF between COMP1 and COMP2−50
0		dBm
−63
−13		dBV
Logarithmic slope (5)At 900MHz, 20kΩ || 68pF between COMP1 and COMP2−1.74µA/dB
At 1800MHz, 20kΩ || 68pF between COMP1 and COMP2−1.62
At 1900MHz, 20kΩ || 68pF between COMP1 and COMP2−1.60
At 2000MHz, 20kΩ || 68pF between COMP1 and COMP2−1.59
Logarithmic intercept (5)At 900MHz, 20kΩ || 68pF between COMP1 and COMP2–50.4dBm
At 1800MHz, 20kΩ || 68pF if between COMP1 and COMP2–52.3
At 1900MHz, 20kΩ || 68pF between COMP1 and COMP2–51.9
At 2000MHz, 20kΩ || 68pF between COMP1 and COMP2–52.3
RINDC resistanceSee (3)55.7Ω
ERROR AMPLIFIER
GBWGain-bandwidth productSee (3)5.1MHz
VOOutput swing from railFrom positive rail, sourcing,
IO = 7mA		4790
115		mV
From negative rail sinking,
IO = −7mA		5290
115
IOOutput short-circuit current (6)Sourcing, VO = 2.4V1029.5mA
Sinking, VO = 0.2V1027.1
enOutput-referred noisefMEASURE = 10kHz,
RF input = 1800MHz, –10dBm, 20kΩ || 68pF between COMP1 and COMP2, VOUT =1.4V, set by VRAMP (3)		700nV/√Hz
SRSlew rate2.14.4V/μs
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
(2) All limits are specified by design or statistical analysis.
(3) Typical values represent the most likely parametric norm.
(4) Power in dBV = dBm + 13 when the impedance is 50Ω.
(5) Slope and intercept calculated from graphs VOUT vs RF input power where the current is obtained by division of the voltage by 20kΩ.
(6) The output is not short-circuit protected internally. External protection is necessary to prevent overheating and destruction or adverse reliability.