SLOS447J September   2004  – June 2025 LMV341 , LMV342 , LMV344

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics: V+ = 2.7V
    6. 5.6 Electrical Characteristics: V+ = 5V
    7. 5.7 Shutdown Characteristics: V+ = 2.7V
    8. 5.8 Shutdown Characteristics: V+ = 5V
    9. 5.9 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 PMOS Input Stage
      2. 6.3.2 CMOS Output Stage
      3. 6.3.3 Shutdown
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Examples
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DGK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • 2.7V and 5V performance
  • Rail-to-rail output swing
  • Input bias current:1pA (typical)
  • Input offset voltage: 0.25mV (typical)
  • Low supply current: 100μA (typical)
  • Low shutdown current: 45pA (typical)
  • Gain bandwidth of 1MHz (typical)
  • Slew rate: 1V/μs (typical)
  • Turn-on time from shutdown: 5μs (typical)
  • Input referred voltage noise (at 10kHz): 20nV/√ Hz
  • ESD protection exceeds JESD 22:
    • 2000V Human-Body Model (HBM)
    • 750V Charged-device model (CDM)