SLLSEB3C March 2012 – November 2016 SN65LVPE502A
For related documentation see the following:
SN65LVPE502A to TUSB522P Change Document (SLLA363)
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.