SLVSER6B May   2020  – November 2020 TPS23730

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: DC-DC Controller Section
    6. 7.6 Electrical Characteristics PoE
    7.     14
    8. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  CLSA, CLSB Classification
      2. 8.3.2  DEN Detection and Enable
      3. 8.3.3  APD Auxiliary Power Detect
      4. 8.3.4  PPD Power Detect
      5. 8.3.5  Internal Pass MOSFET
      6. 8.3.6  TPH, TPL and BT PSE Type Indicators
      7. 8.3.7  DC-DC Controller Features
        1. 8.3.7.1 VCC, VB, VBG and Advanced PWM Startup
        2.       28
        3. 8.3.7.2 CS, Current Slope Compensation and Blanking
        4. 8.3.7.3 COMP, FB, EA_DIS, CP, PSRS and Opto-less Feedback
        5. 8.3.7.4 FRS Frequency Setting and Synchronization
        6. 8.3.7.5 DTHR and Frequency Dithering for Spread Spectrum Applications
        7. 8.3.7.6 SST and Soft-Start of the Switcher
        8. 8.3.7.7 SST, I_STP, LINEUV and Soft-Stop of the Switcher
      8. 8.3.8  Switching FET Driver - GATE, GTA2, DT
      9. 8.3.9  EMPS and Automatic MPS
      10. 8.3.10 VDD Supply Voltage
      11. 8.3.11 RTN, AGND, GND
      12. 8.3.12 VSS
      13. 8.3.13 Exposed Thermal pads - PAD_G and PAD_S
    4. 8.4 Device Functional Modes
      1. 8.4.1  PoE Overview
      2. 8.4.2  Threshold Voltages
      3. 8.4.3  PoE Start-Up Sequence
      4. 8.4.4  Detection
      5. 8.4.5  Hardware Classification
      6. 8.4.6  Maintain Power Signature (MPS)
      7. 8.4.7  Advanced Start-Up and Converter Operation
      8. 8.4.8  Line Undervoltage Protection and Converter Operation
      9. 8.4.9  PD Self-Protection
      10. 8.4.10 Thermal Shutdown - DC-DC Controller
      11. 8.4.11 Adapter ORing
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Detailed Design Procedure
          1. 9.2.1.1.1  Input Bridges and Schottky Diodes
          2. 9.2.1.1.2  Input TVS Protection
          3. 9.2.1.1.3  Input Bypass Capacitor
          4. 9.2.1.1.4  Detection Resistor, RDEN
          5. 9.2.1.1.5  Classification Resistor, RCLSA and RCLSB.
          6. 9.2.1.1.6  Dead Time Resistor, RDT
          7. 9.2.1.1.7  APD Pin Divider Network, RAPD1, RAPD2
          8. 9.2.1.1.8  PPD Pin Divider Network, RPPD1, RPPD2
          9. 9.2.1.1.9  Setting Frequency (RFRS) and Synchronization
          10. 9.2.1.1.10 Bias Supply Requirements and CVCC
          11. 9.2.1.1.11 TPH, TPL, and BT Interface
          12. 9.2.1.1.12 Secondary Soft Start
          13. 9.2.1.1.13 Frequency Dithering for Conducted Emissions Control
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 EMI Containment
    4. 11.4 Thermal Considerations and OTSD
    5. 11.5 ESD
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Switching FET Driver - GATE, GTA2, DT

GATE is the gate drive outputs for the DC-DC converter's main switching MOSFET, while GAT2 is its second gate drive.

GATE's phase turns the main switch on when it transitions high, and off when it transitions low. It is also held low when the converter is disabled.

GAT2's phase turns the second switch off when it transitions high, and on when it transitions low. GAT2 is also held low when the converter is disabled. This output can drive active-clamp PMOS devices, and driven flyback synchronous rectifiers. Connecting DT to VB also disables GAT2 in a high-impedance condition.

DT input is used to set the delay between GATE and GAT2 to prevent overlap of MOSFET on times as shown in Figure 7-1. Both MOSFETs should be off between GAT2 going high to GATE going high, and GATE going low to GAT2 going low. The maximum GATE ON time is reduced by the programmed dead-time period. The dead time period is specified with 1 nF of capacitance on GATE and with 0.5-nF capacitance on GAT2. Different loading on these pins changes the effective dead time. A resistor connected from DT to AGND sets the delay between GATE and GAT2 following TBD figure. Note that even in situations like VCC UVLO or return to inrush phase, the programmed dead time is maintained until the switching stops completely.