SGLS346A June 2006 – August 2025 TPS73201-EP , TPS73215-EP , TPS73216-EP , TPS73218-EP , TPS73225-EP , TPS73230-EP , TPS73233-EP , TPS73250-EP
PRODUCTION DATA
The TPS732xx-EP uses an NMOS pass transistor to achieve extremely low dropout. When (VIN – VOUT) is less than the dropout voltage (VDO), the NMOS pass device is in its linear region of operation and the input-to-output resistance is the RDS-ON of the NMOS pass element.
For large step changes in load current, the TPS732xx-EP requires a larger voltage drop from VIN to VOUT to avoid degraded transient response. The boundary of this transient dropout region is approximately twice the dc dropout. Values of VIN – VOUT above this line insure normal transient response.
Operating in the transient dropout region can cause an increase in recovery time. The time required to recover from a load transient is a function of the magnitude of the change in load current rate, the rate of change in load current, and the available headroom (VIN to VOUT voltage drop). Under worst-case conditions [full-scale instantaneous load change with (VIN – VOUT) close to dc dropout levels], the TPS732xx-EP can take a couple of hundred microseconds to return to the specified regulation accuracy.