SBVS263B July 2017 – June 2025 TPS7A39
PRODUCTION DATA
As with most LDOs, this device can be damaged by excessive reverse current.
Reverse current is current that flows through the substrate of the device instead of the normal conducting channel of the pass transistor. This current flow, at high enough magnitudes, degrades long-term reliability of the device resulting from risks of electromigration and excess heat being dissipated across the device.
Conditions where excessive reverse current can occur are outlined in this section, all of which can exceed the absolute maximum rating of VOUTP > VINP + 0.3V and VOUTN < VINN – 0.3V:
Figure 7-6 Example Circuit for Reverse Current Protection Using a Schottky Diode On Positive Rail