SBVS263B July   2017  – June 2025 TPS7A39

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Start-Up Characteristics
    7. 5.7 Timing Diagram
    8. 5.8 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Voltage Regulation
        1. 6.3.1.1 DC Regulation
        2. 6.3.1.2 AC and Transient Response
      2. 6.3.2 User-Settable Buffered Reference
      3. 6.3.3 Active Discharge
      4. 6.3.4 System Start-Up Controls
        1. 6.3.4.1 Start-Up Tracking
        2. 6.3.4.2 Sequencing
          1. 6.3.4.2.1 Enable (EN)
          2. 6.3.4.2.2 Undervoltage Lockout (UVLO) Control
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Dropout Operation
      3. 6.4.3 Disabled
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1  Setting the Output Voltages on Adjustable Devices
      2. 7.1.2  Capacitor Recommendations
      3. 7.1.3  Input and Output Capacitor (CINx and COUTx)
      4. 7.1.4  Feed-Forward Capacitor (CFFx)
      5. 7.1.5  Noise-Reduction and Soft-Start Capacitor (CNR/SS)
      6. 7.1.6  Buffered Reference Voltage
      7. 7.1.7  Overriding Internal Reference
      8. 7.1.8  Start-Up
        1. 7.1.8.1 Soft-Start Control (NR/SS)
          1. 7.1.8.1.1 In-Rush Current
        2. 7.1.8.2 Undervoltage Lockout (UVLOx) Control
      9. 7.1.9  AC and Transient Performance
        1. 7.1.9.1 Power-Supply Rejection Ratio (PSRR)
        2. 7.1.9.2 Channel-to-Channel Output Isolation and Crosstalk
        3. 7.1.9.3 Output Voltage Noise
        4. 7.1.9.4 Optimizing Noise and PSRR
        5. 7.1.9.5 Load Transient Response
      10. 7.1.10 DC Performance
        1. 7.1.10.1 Output Voltage Accuracy (VOUT x)
        2. 7.1.10.2 Dropout Voltage (VDO)
      11. 7.1.11 Reverse Current
      12. 7.1.12 Power Dissipation (PD)
        1. 7.1.12.1 Estimating Junction Temperature
    2. 7.2 Typical Applications
      1. 7.2.1 Design 1: Single-Ended to Differential Isolated Supply
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Switcher Choice
          2. 7.2.1.2.2 Full Bridge Rectifier With Center-Tapped Transformer
          3. 7.2.1.2.3 Total Solution Efficiency
          4. 7.2.1.2.4 Feedback Resistor Selection
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Design 2: Getting the Full Range of a SAR ADC
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
        3. 7.2.2.3 Detailed Design Description
          1. 7.2.2.3.1 Regulation of –0.2V
          2. 7.2.2.3.2 Feedback Resistor Selection
        4. 7.2.2.4 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Board Layout Recommendations to Improve PSRR and Noise Performance
        2. 7.4.1.2 Package Mounting
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 Evaluation Modules
        2. 8.1.1.2 Spice Models
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Reverse Current

As with most LDOs, this device can be damaged by excessive reverse current.

Reverse current is current that flows through the substrate of the device instead of the normal conducting channel of the pass transistor. This current flow, at high enough magnitudes, degrades long-term reliability of the device resulting from risks of electromigration and excess heat being dissipated across the device.

Conditions where excessive reverse current can occur are outlined in this section, all of which can exceed the absolute maximum rating of VOUTP > VINP + 0.3V and VOUTN < VINN – 0.3V:

  • If the device has a large COUTx and the input supply collapses quickly with little or no load current
  • The output is biased when the input supply is not established
  • The output is biased above the input supply
If excessive reverse current flow is expected in the application, then external protection must be used to protect the device. Figure 7-6 shows one approach of protecting the device.

TPS7A39 Example Circuit for Reverse Current Protection Using a Schottky Diode On Positive RailFigure 7-6 Example Circuit for Reverse Current Protection Using a Schottky Diode On Positive Rail