SLUSCV6A April   2017  – February 2018

PRODUCTION DATA.

1. Features
2. Applications
3. Description
1.     Device Images
4. Revision History
5. Pin Configuration and Functions
6. Specifications
7. Parameter Measurement Information
8. Detailed Description
1. 8.1 Overview
2. 8.2 Functional Block Diagram
3. 8.3 Feature Description
4. 8.4 Device Functional Modes
9. Application and Implementation
1. 9.1 Application Information
2. 9.2 Typical Application
1. 9.2.1 Design Requirements
2. 9.2.2 Detailed Design Procedure
3. 9.2.3 Application Curves
10. 10Power Supply Recommendations
11. 11Layout
12. 12Device and Documentation Support
13. 13Mechanical, Packaging, and Orderable Information

• NPL|13

#### 9.2.2.6.2 Selecting a VDDA (Bootstrap) Capacitor

A VDDA capacitor, also referred to as a bootstrap capacitor in bootstrap power supply configurations, allows for gate drive current transients up to 6-A, and needs to maintain a stable gate drive voltage for the power transistor.

The total charge needed per switching cycle can be estimated with

Equation 19.

where

• QG: Gate charge of the power transistor at VVDD
• IVDD: The channel self-current consumption with no load at 200-kHz.

Therefore, the absolute minimum CBoot requirement is:

Equation 20.

where

• ΔVVDDA is the voltage ripple at VDDA, which is 0.5-V in this example.

In practice, the value of CBoot is greater than the calculated value. This allows for the capacitance shift caused by the DC bias voltage and for situations where the power stage would otherwise skip pulses due to load transients. Therefore, it is recommended to include a safety-related margin in the CBoot value and place it as close to the VDD and VSS pins as possible. A 50-V 1-µF capacitor is chosen in this example.

Equation 21.

To further lower the AC impedance for a wide frequency range, it is recommended to have bypass capacitor with a low capacitance value, in this example a 100 nF, in parallel with CBoot to optimize the transient performance.

NOTE

Too much CBOOT can be detrimental. CBOOT may not be charged within the first few cycles and VBOOT could stay below UVLO. As a result, the high-side FET will not follow input signal commands for several cycles. Also during initial CBOOT charging cycles, the bootstrap diode has highest reverse recovery current and losses.