JAJSES8B October 2017 – November 2018 TPS2372
Using Schottky diodes instead of PN junction diodes for the PoE input bridges will reduce the power dissipation in these devices by about 30%. There are, however, some things to consider when using them. The IEEE standard specifies a maximum backfeed voltage of 2.8 V. A 100-kΩ resistor is placed between the unpowered pairs and the voltage is measured across the resistor. Schottky diodes often have a higher reverse leakage current than PN diodes, making this a harder requirement to meet. To compensate, use conservative design for diode operating temperature, select lower-leakage devices where possible, and match leakage and temperatures by using packaged bridges.
Schottky diode leakage currents and lower dynamic resistances can impact the detection signature. Setting reasonable expectations for the temperature range over which the detection signature is accurate is the simplest solution. Increasing RDET slightly may also help meet the requirement.
Schottky diodes have proven less robust to the stresses of ESD transients than PN junction diodes. After exposure to ESD, Schottky diodes may become shorted or leak. Take care to provide adequate protection in line with the exposure levels. This protection may be as simple as ferrite beads and capacitors.
As a general recommendation, use 3-A to 5-A, 100-V rated discrete or bridge diodes for the input rectifiers.
Many high power PoE PD designs require the need for an active FET bridge recitifier in high efficiency applications. An example of an active FET bridge rectifier design can be found in the TPS2372-4EVM-006 User's Guide.