SBASBC4A December   2025  – June 2026 ADS8688W

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Timing Diagrams
    9. 6.9 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Analog Inputs
      2. 7.3.2  Analog Input Impedance
      3. 7.3.3  Input Overvoltage Protection Circuit
      4. 7.3.4  Programmable Gain Amplifier (PGA)
      5. 7.3.5  Second-Order, Low-Pass Filter (LPF)
      6. 7.3.6  ADC Driver
      7. 7.3.7  Multiplexer (MUX)
      8. 7.3.8  Reference
        1. 7.3.8.1 Internal Reference
        2. 7.3.8.2 External Reference
      9. 7.3.9  Auxiliary Channel
        1. 7.3.9.1 Input Driver for the AUX Channel
      10. 7.3.10 ADC Transfer Function
      11. 7.3.11 Alarm Feature
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device Interface
        1. 7.4.1.1 Digital Pin Description
          1. 7.4.1.1.1 CS (Input)
          2. 7.4.1.1.2 SCLK (Input)
          3. 7.4.1.1.3 SDI (Input)
          4. 7.4.1.1.4 SDO (Output)
          5. 7.4.1.1.5 DAISY (Input)
          6. 7.4.1.1.6 RST / PD (Input)
        2. 7.4.1.2 Data Acquisition Example
        3. 7.4.1.3 Host-to-Device Connection Topologies
          1. 7.4.1.3.1 Daisy-Chain Topology
          2. 7.4.1.3.2 Star Topology
      2. 7.4.2 Device Modes
        1. 7.4.2.1 Continued Operation in the Selected Mode (NO_OP)
        2. 7.4.2.2 Frame Abort Condition (FRAME_ABORT)
        3. 7.4.2.3 STANDBY Mode (STDBY)
        4. 7.4.2.4 Power-Down Mode (PWR_DN)
        5. 7.4.2.5 Auto Channel Enable With Reset (AUTO_RST)
        6. 7.4.2.6 Manual Channel n Select (MAN_Ch_n)
        7. 7.4.2.7 Channel Sequencing Modes
        8. 7.4.2.8 Reset Program Registers (RST)
  9. 8 Register Maps
    1. 8.1 Command Register Description
    2. 8.2 Program Register Description
      1. 8.2.1 Program Register Read/Write Operation
      2. 8.2.2 Program Register Map
        1. 8.2.2.1 Auto-Scan Sequencing Control Registers
          1. 8.2.2.1.1 Auto-Scan Sequence Enable Register (address = 01h)
          2. 8.2.2.1.2 Channel Power Down Register (address = 02h)
        2. 8.2.2.2 Alarm Flag Registers (Read-Only)
          1. 8.2.2.2.1 ALARM Overview Tripped-Flag Register (address = 10h)
          2. 8.2.2.2.2 Alarm Flag Registers: Tripped and Active (address = 11h to 14h)
          3. 8.2.2.2.3 Alarm Threshold Setting Registers
        3. 8.2.2.3 Device Features Selection Control Register (address = 03h)
        4. 8.2.2.4 Range Select Registers (addresses 05h-0Ch)
        5. 8.2.2.5 Command Read-Back Register (address = 3Fh)
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Phase-Compensated, 8-Channel, Multiplexed Data Acquisition System for Power Automation
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 78
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Mechanical Data

Internal Reference

The device has an internal 4.096V (nominal value) reference. To select the internal reference, the REFSEL pin must be tied low or connected to AGND. When the internal reference is used, REFIO (pin 5) becomes an output pin with the internal reference value. Placing a 10µF (minimum) decoupling capacitor between the REFIO pin and REFGND (pin 6) is recommended, as shown in Figure 7-7. The capacitor must be placed as close to the REFIO pin as possible. The output impedance of the internal band-gap circuit creates a low-pass filter with this capacitor to band-limit the noise of the reference. The use of a smaller capacitor value allows higher reference noise in the system, thus degrading SNR and SINAD performance. Do not use the REFIO pin to drive external ac or dc loads because REFIO has limited current output capability. The REFIO pin can be used as a source if followed by a suitable op amp buffer (such as the OPA320).

ADS8684W ADS8688W Device Connections for
                                                  Using an Internal 4.096V ReferenceFigure 7-7 Device Connections for Using an Internal 4.096V Reference

The device internal reference is trimmed to a maximum initial accuracy of ±1mV. The histogram in Figure 7-8 shows the distribution of the internal voltage reference output taken from more than 3300 production devices.

ADS8684W ADS8688W Internal Reference Accuracy at Room Temperature HistogramFigure 7-8 Internal Reference Accuracy at Room Temperature Histogram

The initial accuracy specification for the internal reference can be degraded if the die is exposed to any mechanical or thermal stress. Heating the device when being soldered to a PCB and any subsequent solder reflow is a primary cause for shifts in the VREF value. The main cause of thermal hysteresis is a change in die stress and therefore is a function of the package, die-attach material, and molding compound, as well as the layout of the device.

To illustrate this effect, 80 devices are soldered using lead-free solder paste with the manufacturer's suggested reflow profile, as explained in the AN-2029 Handling and Process Recommendations application note. The internal voltage reference output is measured before and after the reflow process and the typical shift in value is shown in Figure 7-9. Although all tested units exhibit a positive shift in the output voltages, negative shifts are also possible. Note that the histogram in Figure 7-9 shows the typical shift for exposure to a single reflow profile. Exposure to multiple reflows, which is common on PCBs with surface-mount components on both sides, causes additional shifts in the output voltage. If the PCB is to be exposed to multiple reflows, solder the ADS868xW in the second pass to minimize device exposure to thermal stress.

ADS8684W ADS8688W Solder Heat Shift Distribution HistogramFigure 7-9 Solder Heat Shift Distribution Histogram

The internal reference is also temperature compensated to provide excellent temperature drift over an extended industrial temperature range of –40°C to 125°C. Figure 7-10 shows the variation of the internal reference voltage across temperature for different values of the AVDD supply voltage. The typical specified value of the reference voltage drift over temperature is 8ppm/°C (Figure 7-11) and the maximum specified temperature drift is equal to 20ppm/°C.

ADS8684W ADS8688W Variation of the Internal Reference Output (REFIO) Across Supply and Temperature
Figure 7-10 Variation of the Internal Reference Output (REFIO) Across Supply and Temperature
ADS8684W ADS8688W Internal Reference Temperature Drift Histogram
AVDD = 5V, number of devices = 30, ΔT = –40°C to 125°C
Figure 7-11 Internal Reference Temperature Drift Histogram