SBVS257 March   2025 TPS7A56

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Output Voltage Setting and Regulation
      2. 6.3.2 Low-Noise, Ultra-High Power-Supply Rejection Ratio (PSRR)
      3. 6.3.3 Programmable Soft-Start (NR/SS Pin)
      4. 6.3.4 Precision Enable and UVLO
      5. 6.3.5 Charge Pump Enable and BIAS Rail
      6. 6.3.6 Power-Good Pin (PG Pin)
      7. 6.3.7 Active Discharge
      8. 6.3.8 Thermal Shutdown Protection (TSD)
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Dropout Operation
      3. 6.4.3 Disabled
      4. 6.4.4 Current-Limit Operation
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1  Precision Enable (External UVLO)
      2. 7.1.2  Undervoltage Lockout (UVLO) Operation
        1. 7.1.2.1 IN Pin UVLO
        2. 7.1.2.2 BIAS UVLO
        3. 7.1.2.3 Typical UVLO Operation
        4. 7.1.2.4 UVLO(IN) and UVLO(BIAS) Interaction
      3. 7.1.3  Dropout Voltage (VDO)
      4. 7.1.4  Input and Output Capacitor Requirements (CIN and COUT)
      5. 7.1.5  Recommended Capacitor Types
      6. 7.1.6  Soft-Start, Noise Reduction (NR/SS Pin), and Power-Good (PG Pin)
      7. 7.1.7  Optimizing Noise and PSRR
      8. 7.1.8  Adjustable Operation
      9. 7.1.9  Load Transient Response
      10. 7.1.10 Charge Pump Operation
      11. 7.1.11 Sequencing
      12. 7.1.12 Power-Good Functionality
      13. 7.1.13 Paralleling for Higher Output Current and Lower Noise
      14. 7.1.14 Power Dissipation (PD)
      15. 7.1.15 Estimating Junction Temperature
      16. 7.1.16 TPS7A57EVM-056 Thermal Analysis
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
      2. 8.1.2 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Mechanical Data

Charge Pump Operation

As discussed in the Charge Pump Enable and BIAS Rail section, the internal charge pump is enabled or disabled using the CP_EN pin. Thus, allowing for operation as low as 1.1V without a BIAS rail.

The CP_EN pin voltage threshold and hysteresis are defined in the Electrical Characteristics table.

Depending on the circuit implementation, the internal charge pump is powered from either the IN or the BIAS rails. This pin is not designed to be digitally controlled with a digital I/O pin. Instead, this pin is intended to be tied on the printed circuit board (PCB) to an analog rail.

Although not intended to be controlled dynamically, the CP_EN pin is controlled with a low impedance source. Make sure to provide adequate sequencing between EN and CP_EN because the CP_EN pin is latched when the EN pin is turned on. Only an EN reset or a power cycle clears and resets the CP_EN latch.

Figure 7-9 shows the switching frequency of the charge pump at no-load and full load.

TPS7A56 Charge Pump Noise Figure 7-9 Charge Pump Noise