SLASFB9 June   2025 MSPM0H3216

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2.     9
    3. 6.2 Signal Descriptions
      1.      11
      2.      12
      3.      13
      4.      14
      5.      15
      6.      16
      7.      17
      8.      18
      9.      19
      10.      20
    4. 6.3 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3   Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
    6. 7.6  Power Supply Sequencing
      1. 7.6.1 POR and BOR
      2. 7.6.2 Power Supply Ramp
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
      2. 7.9.2 Low Frequency Oscillator (LFOSC)
      3. 7.9.3 High Frequency Crystal/Clock
      4. 7.9.4 Low Frequency Crystal/Clock
    10. 7.10 Digital IO
      1. 7.10.1  Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 ADC
      1. 7.11.1 Electrical Characteristics
      2. 7.11.2 Switching Characteristics
      3. 7.11.3 Linearity Parameters
      4. 7.11.4 Typical Connection Diagram
    12. 7.12 Temperature Sensor
    13. 7.13 VREF
      1. 7.13.1 Voltage Characteristics
      2. 7.13.2 Electrical Characteristics
    14. 7.14 I2C
      1. 7.14.1 I2C Characteristics
      2. 7.14.2 I2C Filter
      3. 7.14.3 I2C Timing Diagram
    15. 7.15 SPI
      1. 7.15.1 SPI
      2. 7.15.2 SPI Timing Diagram
    16. 7.16 UART
    17. 7.17 TIMx
    18. 7.18 Windowed Watchdog Characteristics
    19. 7.19 Emulation and Debug
      1. 7.19.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  Overview
    2. 8.2  CPU
    3. 8.3  Operating Modes
      1. 8.3.1 Functionality by Operating Mode (MSPM0H321x)
    4. 8.4  Power Management Unit (PMU)
    5. 8.5  Clock Module (CKM)
    6. 8.6  DMA_B
    7. 8.7  Events
    8. 8.8  Memory
      1. 8.8.1 Memory Organization
      2. 8.8.2 Peripheral File Map
      3. 8.8.3 Peripheral Interrupt Vector
    9. 8.9  Flash Memory
    10. 8.10 SRAM
    11. 8.11 GPIO
    12. 8.12 IOMUX
    13. 8.13 ADC
    14. 8.14 Temperature Sensor
    15. 8.15 VREF
    16. 8.16 CRC
    17. 8.17 UART
    18. 8.18 SPI
    19. 8.19 I2C
    20. 8.20 Low-Frequency Sub System (LFSS)
    21. 8.21 RTC_B
    22. 8.22 IWDT_B
    23. 8.23 WWDT
    24. 8.24 Timers (TIMx)
    25. 8.25 Device Analog Connections
    26. 8.26 Input/Output Diagrams
    27. 8.27 Serial Wire Debug Interface
    28. 8.28 Device Factory Constants
    29. 8.29 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
    3. 10.3 Documentation Support
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VDD Supply voltage At VDD pin -0.3 6.5 V
VI Input voltage Applied to any common tolerance pins -0.3 VDD V
IVDD Current of VDD pin Current into VDD pin (source) 80 mA
IVSS Current of VSS pin Current out of VSS pin (sink) 80 mA
IIO Current for SDIO pin Current sunk or sourced by SDIO pin 6 mA
ID Supported diode current Diode current at any device pin ±2 mA
Tstg Storage temperature –40 150 °C
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.