SLASFB9 June 2025 MSPM0H3216
ADVANCE INFORMATION
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VIH | High level input voltage | VDD≥4.5V | 0.7*VDD | VDD | V | ||
| VIL | Low level input voltage | VDD≥4.5V | -0.3 | 0.3*VDD | V | ||
| VHYS | Hysteresis | 0.1*VDD | V | ||||
| Ilkg | High-Z leakage current | HSIO | VDD = 5.5V | 0.79 | uA | ||
| SDIO(1)(2) | VDD = 5.5V | 0.42 | uA | ||||
| RPU | Pull up resistance | VIN = VSS | 40 | kΩ | |||
| CI | Input capacitance | VDD = 5V | 20 | pF | |||
| VOH | High level output voltage | HSIO | VDD≥4.5V, |IIO|,max=6mA | VDD-0.4 | V | ||
| VOL | Low level output voltage | HSIO | VDD≥4.5V, |IIO|,max=6mA | 0.4 | V | ||
| VOH | High level output voltage | SDIO | VDD ≥ 4.5V, IOH,max = 3mA | VDD-0.4 | V | ||
| VOL | Low level output voltage | SDIO | VDD ≥ 4.5V, IOH,max = 3mA | 0.4 | V | ||