SLASFC9A December   2024  – June 2025 MSPM0L1116 , MSPM0L1117

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
    1. 5.1 Device Comparison Table
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
      1.      11
    3. 6.3 Signal Descriptions
      1.      13
      2.      14
      3.      15
      4.      16
      5.      17
      6.      18
      7.      19
      8.      20
      9.      21
      10.      22
      11.      23
      12.      24
      13.      25
      14.      26
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
    6. 7.6  Power Supply Sequencing
      1. 7.6.1 Power Supply Ramp
      2. 7.6.2 POR and BOR
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
      2. 7.9.2 Low Frequency Oscillator (LFOSC)
      3. 7.9.3 Low Frequency Crystal/Clock
    10. 7.10 Digital IO
      1. 7.10.1  Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 Analog Mux VBOOST
    12. 7.12 ADC
      1. 7.12.1 Electrical Characteristics
      2. 7.12.2 Switching Characteristics
      3. 7.12.3 Linearity Parameters
      4. 7.12.4 Typical Connection Diagram
    13. 7.13 Temperature Sensor
    14. 7.14 VREF
      1. 7.14.1 Voltage Characteristics
      2. 7.14.2 Electrical Characteristics
    15. 7.15 I2C
      1. 7.15.1 I2C Characteristics
      2. 7.15.2 I2C Filter
      3. 7.15.3 I2C Timing Diagram
    16. 7.16 SPI
      1. 7.16.1 SPI
      2. 7.16.2 SPI Timing Diagram
    17. 7.17 UART
    18. 7.18 TIMx
    19. 7.19 TRNG Electrical Characteristics
    20. 7.20 TRNG Switching Characteristics
    21. 7.21 Emulation and Debug
      1. 7.21.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  Functional Block Diagram
    2. 8.2  CPU
    3. 8.3  Operating Modes
      1. 8.3.1 Functionality by Operating Mode
    4. 8.4  Power Management Unit (PMU)
    5. 8.5  Clock Module (CKM)
    6. 8.6  DMA
    7. 8.7  Events
    8. 8.8  Memory
      1. 8.8.1 Memory Organization
      2. 8.8.2 Peripheral File Map
      3. 8.8.3 Peripheral Interrupt Vector
    9. 8.9  Flash Memory
    10. 8.10 SRAM
    11. 8.11 GPIO
    12. 8.12 IOMUX
    13. 8.13 ADC
    14. 8.14 Temperature Sensor
    15. 8.15 VREF
    16. 8.16 Security
    17. 8.17 TRNG
    18. 8.18 AESADV
    19. 8.19 Keystore
    20. 8.20 CRC-P
    21. 8.21 UART
    22. 8.22 I2C
    23. 8.23 SPI
    24. 8.24 Low-Frequency Sub System (LFSS)
    25. 8.25 RTC_B
    26. 8.26 IWDT_B
    27. 8.27 WWDT
    28. 8.28 Timers (TIMx)
    29. 8.29 Device Analog Connections
    30. 8.30 Input/Output Diagrams
    31. 8.31 Serial Wire Debug Interface
    32. 8.32 Bootstrap Loader (BSL)
    33. 8.33 Device Factory Constants
    34. 8.34 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
    3. 10.3 Documentation Support
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

7.10.1  Electrical Characteristics

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH High level input voltage ODIO (1) VDD≥1.62V 0.7*VDD 5.5 V
VDD≥2.7V 2 5.5 V
All I/O except ODIO & Reset VDD≥1.62V 0.7*VDD VDD+0.3 V
VIL Low level input voltage ODIO VDD≥1.62V -0.3 0.3*VDD V
VDD≥2.7V -0.3 0.8 V
All I/O except ODIO & Reset VDD≥1.62V -0.3 0.3*VDD V
VHYS Hysteresis ODIO 0.05*VDD V
All I/O except ODIO 0.1*VDD V
Ilkg High-Z leakage current (All packages) SDIO (except PB24) (2)(3) 1.62V ≤ VDD ≤ 3.6V, -40 ℃ ≤ Ta ≤ 125 ℃ 50(4) nA
PB24(2)(3) 1.62V ≤ VDD ≤ 3.6V, -40 ℃ ≤ Ta ≤ 125 ℃ 130(4) nA
RPU Pull up resistance All I/O except ODIO VIN = VSS 40 kΩ
RPD Pull down resistance VIN = VDD 40 kΩ
CI Input capacitance VDD = 3.3V 5 pF
VOH High level output voltage SDIO VDD≥2.7V, |IIO|,max=6mA
VDD≥1.71V, |IIO|,max=2mA
VDD≥1.62V, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 25 °C		 VDD-0.4 V
VDD≥2.7V, |IIO|,max=6mA
VDD≥1.71V, |IIO|,max=2mA
VDD≥1.62V, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 125 °C		 VDD-0.45
HSIO VDD≥2.7V, DRV=1, |IIO|,max=6mA
VDD≥1.71V, DRV=1, |IIO|,max=3mA
VDD≥1.62V, DRV=1, |IIO|,max=2mA
-40 °C ≤ Ta ≤ 25 °C		 VDD-0.4
VDD≥2.7V, DRV=1, |IIO|,max=6mA
VDD≥1.71V, DRV=1, |IIO|,max=3mA
VDD≥1.62V, DRV=1, |IIO|,max=2mA
-40 °C ≤ Ta ≤ 125 °C		 VDD-0.45
VDD≥2.7V, DRV=0, |IIO|,max=4mA
VDD≥1.71V, DRV=0, |IIO|,max=2mA
VDD≥1.62V, DRV=0, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 25 °C		 VDD-0.4
VDD≥2.7V, DRV=0, |IIO|,max=4mA
VDD≥1.71V, DRV=0, |IIO|,max=2mA
VDD≥1.62V, DRV=0, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 125 °C		 VDD-0.45
HDIO VDD≥2.7V, DRV=1(5), |IIO|,max=20mA
VDD≥1.71V, DRV=1(5), |IIO|,max=10mA		 VDD-0.4
VDD≥2.7V, DRV=0, |IIO|,max=6mA
VDD≥1.71V, DRV=0, |IIO|,max=2mA		 VDD-0.4
VOL Low level output voltage SDIO VDD≥2.7V, |IIO|,max=6mA
VDD≥1.71V, |IIO|,max=2mA
VDD≥1.62V, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 25 °C		 0.4 V
VDD≥2.7V, |IIO|,max=6mA
VDD≥1.71V, |IIO|,max=2mA
VDD≥1.62V, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 125 °C		 0.45
HSIO VDD≥2.7V, DRV=1, |IIO|,max=6mA
VDD≥1.71V, DRV=1, |IIO|,max=3mA
VDD≥1.62V, DRV=1, |IIO|,max=2mA
-40 °C ≤ Ta ≤ 25 °C		 0.4
VDD≥2.7V, DRV=1, |IIO|,max=6mA
VDD≥1.71V, DRV=1, |IIO|,max=3mA
VDD≥1.62V, DRV=1, |IIO|,max=2mA
-40 °C ≤ Ta ≤ 125 °C		 0.45
VDD≥2.7V, DRV=0, |IIO|,max=4mA
VDD≥1.71V, DRV=0, |IIO|,max=2mA
VDD≥1.62V, DRV=0, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 25 °C		 0.4
VDD≥2.7V, DRV=0, |IIO|,max=4mA
VDD≥1.71V, DRV=0, |IIO|,max=2mA
VDD≥1.62V, DRV=0, |IIO|,max=1.5mA
-40 °C ≤ Ta ≤ 125 °C		 0.45
HDIO VDD≥2.7V, DRV=1(5), |IIO|,max=20mA
VDD≥1.71V, DRV=1(5), |IIO|,max=10mA		 0.4
VDD≥2.7V, DRV=0, |IIO|,max=6mA
VDD≥1.71V, DRV=0, |IIO|,max=2mA		 0.4

ODIO

 VDD≥2.7V, IOL,max=8mA
VDD≥1.71V, IOL,max=4mA
-40 °C ≤ Ta ≤ 25 °C		 0.4
VDD≥2.7V, IOL,max=8mA
VDD≥1.71V, IOL,max=4mA
-40 °C ≤ Ta ≤ 125 °C		 0.45
(1) I/O Types: ODIO = 5V Tolerant Open-Drain , SDIO = Standard-Drive , HSIO = High-Speed
(2) The leakage current is measured with VSS or VDD applied to the corresponding pin(s), unless otherwise noted.
(3) The leakage of the digital port pins is measured individually. The port pin is selected for input and the pullup/pulldown resistor is disabled.
(4) This value is for SDIO not muxed with any analog inputs. If the SDIO is muxed with analog inputs then the leakage can be higher. 
(5) When operating a HDIO in DRV=1 high drive strength configuration, a series resistor is necessary to limit the signal slew rate