SLASFC9A December   2024  – June 2025 MSPM0L1116 , MSPM0L1117

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
    1. 5.1 Device Comparison Table
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
      1.      11
    3. 6.3 Signal Descriptions
      1.      13
      2.      14
      3.      15
      4.      16
      5.      17
      6.      18
      7.      19
      8.      20
      9.      21
      10.      22
      11.      23
      12.      24
      13.      25
      14.      26
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
    6. 7.6  Power Supply Sequencing
      1. 7.6.1 Power Supply Ramp
      2. 7.6.2 POR and BOR
    7. 7.7  Flash Memory Characteristics
    8. 7.8  Timing Characteristics
    9. 7.9  Clock Specifications
      1. 7.9.1 System Oscillator (SYSOSC)
      2. 7.9.2 Low Frequency Oscillator (LFOSC)
      3. 7.9.3 Low Frequency Crystal/Clock
    10. 7.10 Digital IO
      1. 7.10.1  Electrical Characteristics
      2. 7.10.2 Switching Characteristics
    11. 7.11 Analog Mux VBOOST
    12. 7.12 ADC
      1. 7.12.1 Electrical Characteristics
      2. 7.12.2 Switching Characteristics
      3. 7.12.3 Linearity Parameters
      4. 7.12.4 Typical Connection Diagram
    13. 7.13 Temperature Sensor
    14. 7.14 VREF
      1. 7.14.1 Voltage Characteristics
      2. 7.14.2 Electrical Characteristics
    15. 7.15 I2C
      1. 7.15.1 I2C Characteristics
      2. 7.15.2 I2C Filter
      3. 7.15.3 I2C Timing Diagram
    16. 7.16 SPI
      1. 7.16.1 SPI
      2. 7.16.2 SPI Timing Diagram
    17. 7.17 UART
    18. 7.18 TIMx
    19. 7.19 TRNG Electrical Characteristics
    20. 7.20 TRNG Switching Characteristics
    21. 7.21 Emulation and Debug
      1. 7.21.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  Functional Block Diagram
    2. 8.2  CPU
    3. 8.3  Operating Modes
      1. 8.3.1 Functionality by Operating Mode
    4. 8.4  Power Management Unit (PMU)
    5. 8.5  Clock Module (CKM)
    6. 8.6  DMA
    7. 8.7  Events
    8. 8.8  Memory
      1. 8.8.1 Memory Organization
      2. 8.8.2 Peripheral File Map
      3. 8.8.3 Peripheral Interrupt Vector
    9. 8.9  Flash Memory
    10. 8.10 SRAM
    11. 8.11 GPIO
    12. 8.12 IOMUX
    13. 8.13 ADC
    14. 8.14 Temperature Sensor
    15. 8.15 VREF
    16. 8.16 Security
    17. 8.17 TRNG
    18. 8.18 AESADV
    19. 8.19 Keystore
    20. 8.20 CRC-P
    21. 8.21 UART
    22. 8.22 I2C
    23. 8.23 SPI
    24. 8.24 Low-Frequency Sub System (LFSS)
    25. 8.25 RTC_B
    26. 8.26 IWDT_B
    27. 8.27 WWDT
    28. 8.28 Timers (TIMx)
    29. 8.29 Device Analog Connections
    30. 8.30 Input/Output Diagrams
    31. 8.31 Serial Wire Debug Interface
    32. 8.32 Bootstrap Loader (BSL)
    33. 8.33 Device Factory Constants
    34. 8.34 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Tools and Software
    3. 10.3 Documentation Support
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

7.7 Flash Memory Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supply
VDDPGM/ERASE Program and erase supply voltage 1.62 3.6 V
IDDERASE Supply current from VDD during erase operation Supply current delta 10 mA
IDDPGM Supply current from VDD during program operation Supply current delta 10 mA
Endurance
NWEC(HI_ENDURANCE) Erase/program cycle endurance for chosen 32 sectors of flash (1) 100 k cycles
NWEC (NORMAL_ENDURANCE) Erase/program cycle endurance (Flash not used for HI_ENDURANCE) (1) 10 k cycles
NE(MAX) Total erase operations before failure (2) 802 k erase operations
NW(MAX) Write operations per word line before sector erase (3) 83 write operations
Retention
tRET_85 Flash memory data retention -40°C <= Tj <= 85°C 60 years
tRET_105 Flash memory data retention -40°C <= Tj <= 105°C 11.4 years
Program and Erase Timing
tPROG (WORD, 64) Program time for flash word (4) (6) 50 275 µs
tPROG (SEC, 64) Program time for 1kB sector (5) (6) 6.4 ms
tERASE (SEC) Sector erase time ≤2k erase/program cycles, Tj≥25°C 4 20 ms
tERASE (SEC) Sector erase time ≤10k erase/program cycles, Tj≥25°C 20 150 ms
tERASE (SEC) Sector erase time <10k erase/program cycles 20 200 ms
tERASE (BANK) Bank erase time <10k erase/program cycles 22 220 ms
(1) Up to 32 application-chosen sectors from the main flash bank(s) or data bank can be used as high endurance sectors. This enables applications that frequently update flash data such as EEPROM emulation. 
(2) Total number of cumulative erase operations supported by the flash before failure. A sector erase or bank erase operation is
considered to be one erase operation.
(3) Maximum number of write operations allowed per word line before the word line must be erased. If additional writes to the same word
line are required, a sector erase is required once the maximum number of write operations per word line is reached.
(4) Program time is defined as the time from when the program command is triggered until the command completion interrupt flag is set in
the flash controller.
(5) Sector program time is defined as the time from when the first word program command is triggered until the final word program
command completes and the interrupt flag is set in the flash controller. This time includes the time needed for software to load each
flash word (after the first flash word) into the flash controller during programming of the sector.
(6) Flash word size is 64 data bits (8 bytes). On devices with ECC, the total flash word size is 72 bits (64 data bits plus 8 ECC bits).