11 Revision History
Changes from December 1, 2024 to May 31, 2025 (from Revision * (December 2024) to Revision A (June 2025))
- Corrected list of I/O featuresGo
- Added note to indicate that this device is targeting PSA-L1
certificationGo
- Updated Device Comparison section to tabulate communication
peripheral instancesGo
- Updated Pin Attributes section to correctly list IO types available in this
device, and added footnote indicating SDIO with wake functionalityGo
- Corrected Pin Attributes tables to indicate that GPIO PA2 is controlled by
PINCM7 instead of PINCM61Go
- Corrected Pin Attributes tables to indicate that PA15 is a High-drive type
IO (HDIO)Go
- Corrected Pin Attributes tables to indicate that PB24 is a standard type IO
(SDIO)Go
- Updated Absolute Maximum Ratings for I_VDD and I_VSS to reflect
correct junction temperatures and also remove VDD>=2.7V
conditionGo
- Added diode current rating for PB24 to Absolute Maximum
RatingsGo
- Added ambient temperature rating to Absolute Maximum
RatingsGo
- Added footnote to I_VDD and I_VSS guidelines for reduced current
consumption when VDD supply voltage is low (e.g. 1.62V)Go
- Updated Supply Current Characteristics to include maximum values and
accurate typical valuesGo
- Added Supply Current Characteristics parameter for per-MHz SLEEP
current (assessed at 32MHz)Go
- Changed POR and BOR specifications to reflect accurate voltage
thresholds for POR and coldboot BORGo
- Updated POR and BOR specifications section to remove footnote for
dVDD/dt conditionGo
- Changed Flash Memory Characteristics to allow for users to designate
any 32kB sectors of flash memory to apply 100k cycles, rather than only the
lower 32kB sectorsGo
- Updated Timing Characteristics section with accurate specification
values and corrected spec label for Wakeup time from STOP1 and STOP2 to
RUNGo
- Updated System Oscillator specifications with accurate
valuesGo
- Removed SYSOSC Typical Frequency Accuracy FigureGo
- Removed LFXT specification for VDD power supply range, as
specifications were already applicable for entire VDD operating range of the
deviceGo
- Changed LFXT start-up time to indicate typical value of 1
secondGo
- Updated Digital IO electrical characteristics to reflect ambient
temperature conditionsGo
- Added rise/fall time specifications to Digital IO switching
characteristicsGo
- Added footnote for HDIO DRV=1 condition to limit signal slew rate
for high current operationGo
- Updated ADC specifications for SNR and PSRRDC to remove minimum
valuesGo
- Updated Temperature Sensor coefficient specification
valuesGo
- Changed VREF electrical characteristics for I_VREF, TC_VREF, and
PSRRDC specification valuesGo
- Removed Vnoise specifications from VREF electrical
characteristicsGo
- Updated SPI specifications to reflect corrected setup and hold
timing valuesGo
- Updated CPU description section to indicate support for memory
protection unit (MPU)Go
- Updated Supported Functionality by Operating Mode table for accuracy
and organizationGo
- Added detailed DMA Features table to DMA sectionGo
- Updated Flash Memory section to indicate that any 32kB sectors can
be selected for high-endurance operationGo
- Updated description in SRAM section regarding write-execute user
operationGo
- Updated GPIO section to clarify that there are two GPIO ports in
this device (PAx and PBx)Go
- Updated Temperature Sensor section to add details
for per-unit TSc calculation method using
V_TRIM_0KGo
- Updated VREF section to clarify that the VREF in this device does
not require a decoupling capacitor on VREF+/- pins for proper operation, and
also added a block diagram detailing VREF configurations. Go
- Updated Security section to list all security features present in
this deviceGo
- Updated SPI section to reference
MCLK rather than ULPCLKGo
- Updated LFSS section to indicate
presence of LFSS_B and RTC_B
variantsGo
- Updated Timers section to correctly detail capabilities of various
timer instance typesGo
- Updated Mechanical, Packaging, and Orderable Information section to
append drawings for each package variantGo