SLLSFW6B March 2024 – July 2026 ISOUSB211-Q1
PRODUCTION DATA
In the application example shown in Figure 8-6, ISOUSB211-Q1 is powered using USB VBUS on the connector side, and a local 3.3V digital supply on the microcontroller side to generate V3P3Vx. The internal LDOs are used to generate V1P8Vx on both sides like in Example Configuration 1. However, the VCC1 and VCC2 are connected to VBUS and 3.3 VLV, not directly like in Example Configuration 1, but through resistors R1 (20Ω, 250mW) and R2 (5Ω, 50mW) respectively.
The external resistors drop voltage, and dissipate power, helping reduce the power dissipation within ISOUSB211-Q1, and the corresponding temperature rise. The resistor values are decided keeping in mind that the VCCx voltage can be as low as 2.4V. Additional 1μF capacitors are needed on VCCx pins.
In this scenario, the total power consumption inside the IC from both sides taken together is:
VBUS1 × IVBUS1 + VBUS1 × IVCC1 - 20Ω × IVCC1× IVCC1 + V3P3V2 × I3P3V2 + V3P3V2 × IVCC2 - 5Ω × IVCC2 × IVCC2
Assuming 5.25V as the maximum value of VBUS, and 3.5V as the maximum value of the 3.3V local supply, the internal power dissipation is calculated as
5.25V × 13.5mA + 5.25V × 96mA - 20Ω × 96mA × 96mA + 3.5V × 13.5mA + 3.5V × 96mA - 5Ω × 96mA × 96mA = 728mW.
Since the junction-to-air thermal resistance is 44.2°C/W, this power dissipation results in a 33°C internal temperature rise. Ambient temperature up to 117°C can be supported for this configuration.
This configuration offers a middle path between Example Configuration 1 and Example Configuration 2, achieving lower temperature rise, and higher ambient temperature operation, with the addition of only two resistors and two capacitors.