SLVK075A May   2022  – April 2025 DP83561-SP

 

  1.   1
  2.   Single-Event Effects Test Report of the DP83561-SP Space grade (QMLV-RHA) 10/100/1000 Ethernet PHY
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects
  6. 3Test Device and Evaluation Board Information
    1.     7
  7. 4Irradiation Facility and Setup
  8. 5Depth, Range, and LETEFF Calculation
  9. 6Test Setup and Procedures
  10. 7Single Event Effects (SEE)
    1. 7.1 Single-Event-Latchup (SEL)
    2. 7.2 Single Event Transients (SET)
  11. 8Summary
  12.   A References
  13.   B Revision History

2 Single-Event Effects

With deployment of Ethernet devices to space systems, the need for PHYs to be radiation hardened by design for high performance and reliability is becoming more important. This document discusses SET and SEL performance of the DP83561-SP.

SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-substrate and n-well and n+ and p+ contacts) [1, 2]. If formed, the parasitic bipolar structure creates a high-conductance path (creating a steady-state current that is orders-of-magnitude higher than the normal operating current) between the power and ground that persists (is latched) until power is removed or until the device is destroyed by the high-current state. The design and process techniques used on the DP83561-SP for SEL-mitigation were sufficient as the DP83561-SP exhibited no SEL events with heavy-ions of up to LETEFF = 121MeV × cm2/ mg at a flux of 105 ions / cm2·s, fluences in excess of 107 ions/cm2, and an ambient temperature of 125°C.