SLVK222 August 2025 TPS7H5020-SP
- 1
- 2
- Trademarks
- 1 Introduction
- 2 Single-Event Effects (SEE)
- 3 Device and Test Board Information
- 4 Irradiation Facility and Setup
- 5 LETEFF and Range Calculation
- 6 Test Setup and Procedures
- 7 Destructive Single-Event Effects (DSEE)
- 8 Single-Event Transients (SET)
- 9 Event Rate Calculations
- 10Summary
- A References
7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
During the SEB/SEGR characterization, the device was tested at room temperature of approximately 25°C. The device was tested under both the enabled and disabled mode. For the SEB-OFF mode the device was disabled using the EN-pin by forcing 0V (using CH # 1 of a E36311A Keysight PS). During the SEB/SEGR testing with the device enabled/disabled, not a single input current event was observed.
The species used for the SEB testing was 165Ho at 15MeV/nucleon and 169Tm at 19.5MeV/nucleon. For both ions an angle of 0° was used to achieve a LETEFF of ≈75MeV·cm2/mg (for more details refer to Ion LETEFF and Range in Silicon). The kinetic energy in the vacuum for 165Ho is 2.474GeV and 169Tm is 3.295GeV. Flux of approximately 4 × 104 to 1 × 105 ions×cm2/s and a fluence of ≈107 ions/cm2 was used for the run. Run duration to achieve this fluence was ≈2 minutes. The 6 production devices and 7 pre-production devices (same as used in SEL testing) were powered up and exposed to the heavy-ions using the maximum recommended bias conditions. No SEB/SEGR current events were observed during the 26 runs, indicating that the TPS7H502X-SP is SEB/SEGR-free up to LETEFF = 75MeV·cm2/mg and across the full electrical specifications.Summary of TPS7H502X-SP SEB/SEGR Test Condition and Resultsshows the SEB/SEGR test conditions and results.
| RUN # | UNIT # | Facility | Device Type | Production Type | Mode | ION | LETEFF (MeV·cm2/mg) | FLUX (ions×cm2/s) | FLUENCE (ions/cm2) | ENABLED STATUS | VIN (V) | PVIN (V) | VLDO (V) | SEB EVENT? |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
14 | 1 | TAMU | TPS7H5020-SP | Pre | Silicon | 165Ho | 75 | 3.76 x 104 | 9.99 x 106 | EN | 14 | 14 | 5.5 | No |
15 | 1 | TAMU | TPS7H5020-SP | Pre | Silicon | 165Ho | 75 | 3.83 x 104 | 9.99 x 106 | DIS | 14 | 14 | 5.5 | No |
16 | 2 | TAMU | TPS7H5020-SP | Pre | Silicon | 165Ho | 75 | 1.10 x 105 | 1.00 x 107 | EN | 14 | 14 | 5.5 | No |
17 | 2 | TAMU | TPS7H5020-SP | Pre | Silicon | 165Ho | 75 | 1.00 x 105 | 1.00 x 107 | DIS | 14 | 14 | 5.5 | No |
18 | 3 | TAMU | TPS7H5020-SP | Pre | GaN | 165Ho | 75 | 1.05 x 105 | 1.00 x 107 | EN | 14 | 5.5 | 5.5 | No |
19 | 3 | TAMU | TPS7H5020-SP | Pre | GaN | 165Ho | 75 | 1.60 x 105 | 1.00 x 107 | DIS | 14 | 5.5 | 5.5 | No |
20 | 4 | TAMU | TPS7H5021-SP | Pre | Silicon | 165Ho | 75 | 1.00 x 105 | 1.00 x 107 | EN | 14 | 14 | 5.5 | No |
21 | 4 | TAMU | TPS7H5021-SP | Pre | Silicon | 165Ho | 75 | 1.14 x 105 | 1.00 x 107 | DIS | 14 | 14 | 5.5 | No |
22 | 5 | TAMU | TPS7H5021-SP | Pre | GaN | 165Ho | 75 | 1.04 x 105 | 1.00 x 107 | EN | 14 | 5.5 | 5.5 | No |
23 | 5 | TAMU | TPS7H5021-SP | Pre | GaN | 165Ho | 75 | 1.00 x 105 | 1.00 x 107 | DIS | 14 | 5.5 | 5.5 | No |
24 | 6 | TAMU | TPS7H5021-SP | Pre | Silicon | 165Ho | 75 | 1.09 x 105 | 1.00 x 107 | EN | 14 | 14 | 5.5 | No |
25 | 6 | TAMU | TPS7H5021-SP | Pre | Silicon | 165Ho | 75 | 9.34 x 104 | 1.00 x 107 | DIS | 14 | 14 | 5.5 | No |
26 | 7 | TAMU | TPS7H5021-SP | Pre | GaN | 165Ho | 75 | 1.13 x 105 | 1.00 x 107 | EN | 14 | 5.5 | 5.5 | No |
27 | 7 | TAMU | TPS7H5021-SP | Pre | GaN | 165Ho | 75 | 1.10 x 105 | 1.00 x 107 | DIS | 14 | 5.5 | 5.5 | No |
28 | 8 | TAMU | TPS7H5020-SP | Final | Silicon | 165Ho | 75 | 1.16 x 105 | 1.00 x 107 | EN | 14 | 14 | 5.5 | No |
29 | 8 | TAMU | TPS7H5020-SP | Final | Silicon | 165Ho | 75 | 1.19 x 105 | 1.00 x 107 | DIS | 14 | 14 | 5.5 | No |
30 | 9 | TAMU | TPS7H5020-SP | Final | GaN | 165Ho | 75 | 1.12 x 105 | 1.00 x 107 | EN | 14 | 5.5 | 5.5 | No |
31 | 9 | TAMU | TPS7H5020-SP | Final | GaN | 165Ho | 75 | 1.10 x 105 | 1.00 x 107 | DIS | 14 | 5.5 | 5.5 | No |
32 | 10 | TAMU | TPS7H5021-SP | Final | Silicon | 165Ho | 75 | 1.01 x 105 | 1.00 x 107 | EN | 14 | 14 | 5.5 | No |
33 | 10 | TAMU | TPS7H5021-SP | Final | Silicon | 165Ho | 75 | 9.50 x 104 | 1.00 x 107 | DIS | 14 | 14 | 5.5 | No |
34 | 11 | TAMU | TPS7H5021-SP | Final | GaN | 165Ho | 75 | 1.15 x 105 | 1.00 x 107 | EN | 14 | 5.5 | 5.5 | No |
35 | 11 | TAMU | TPS7H5021-SP | Final | GaN | 165Ho | 75 | 1.14 x 105 | 1.00 x 107 | DIS | 14 | 5.5 | 5.5 | No |
36 | 12 | KSEE | TPS7H5020-SP | Final | Silicon | 169Tm | 75 | 1.06 x 105 | 1.00 x 107 | EN | 14 | 14 | 5.5 | No |
37 | 12 | KSEE | TPS7H5020-SP | Final | Silicon | 169Tm | 75 | 9.65 x 104 | 1.00 x 107 | DIS | 14 | 14 | 5.5 | No |
38 | 13 | KSEE | TPS7H5021-SP | Final | Silicon | 169Tm | 75 | 1.06 x 105 | 1.00 x 107 | EN | 14 | 14 | 5.5 | No |
39 | 13 | KSEE | TPS7H5021-SP | Final | Silicon | 169Tm | 75 | 1.04 x 105 | 1.00 x 107 | DIS | 14 | 14 | 5.5 | No |
Using the MFTF method described in Single-Event Effects (SEE) Confidence Interval Calculations application report, the upper-bound cross-section (using a 95% confidence level) is calculated as:
σSEB ≤ 1.42 x 10-8 cm2/device for LETEFF = 75MeV·cm2/mg and T = 25°C.
Figure 7-3 SEB On Run #28 TPS7H5020-SP
Silicon Mode
Figure 7-4 SEB Off Run #29 TPS7H5020-SP Silicon Mode
Figure 7-5 SEB On Run #32 TPS7H5021-SP GaN Mode
Figure 7-6 SEB Off Run #33 TPS7H5021-SP GaN Mode