SLVK222 August   2025 TPS7H5020-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

Abstract

The purpose of this study is to characterize the single-event effects (SEE) performance due to heavy-ion irradiation of the TPS7H502X-SP. Heavy-ions with LETEFF of 75MeV·cm2 /mg were used to irradiate 8 production devices and 13 pre-production devices. Flux of 4 × 104 to 1 × 105 ions×cm2/s and fluence of ≈107 ions/cm2 per run were used for the characterization. The results demonstrated that the TPS7H502X-SP is SEL-free up to 75MeV·cm2/mg at T = 125°C and SEB/SEGR free up to 75MeV·cm2/mg at T = 25°C. SET transients performance for output pulse-width excursions ≥ |20%| from the nominal pulse-width in an open-loop configuration are discussed. SET transient performance for output voltage excursions ≥ |3%| and switch pulse-width excursions ≥ |20%| are also discussed with the device in a flyback configuration.