SLVK222 August   2025 TPS7H5020-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 LETEFF and Range Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

5 LETEFF and Range Calculation

Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H502X-SP [Left] and SEUSS 2024 Application Used to Determine Key Ion Parameters [Right]Figure 5-1 Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H502X-SP [Left] and SEUSS 2024 Application Used to Determine Key Ion Parameters [Right]

The TPS7H502X-SP is fabricated in the TI Linear BiCMOS 250-nm process with a back-end-of-line (BEOL) stack consisting of 4 levels of standard thickness aluminum. The total stack height from the surface of the passivation to the silicon surface is 10.9 μm based on nominal layer thickness as shown in Figure 5-1.

Accounting for energy loss through the degrader, copper foil, beam port window, air gap, and the BEOL stack of the TPS7H502X-SP, the effective LET (LETEFF) at the surface of the silicon substrate and the range was determined with:

  • SEUSS 2022 software (provided by TAMU and based on the latest SRIM-2013 [7] models)
  • MSU Stack-Up Calculator (provided by MSU FRIB and based on latest SRIM-2013 [7] models)

The results are shown in Ion LETEFF and Range in Silicon.

Table 5-1 Ion LETEFF and Range in Silicon

Facility

Beam Energy (MeV/nucleon)

Ion Type

Degrader Steps (#)

Degrader Angle (°)

Copper Foil Width (μm)

Beam Port Window

Air Gap (mm)

 Angle

of Incidence

 LETEFF (MeV·cm2/mg)

Range in Silicon (μm)

TAMU

15

165Ho

0

0

-

1-mil Aramica

40

0

75

95.7

KSEE

19.5

169Tm

-

-

5

3-mil PEN

60

0

75

89.8