SLVS647J August   2006  – May 2025 TLE4275-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Diagrams
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Power-Good Reset (RESET)
      2. 7.3.2 Adjustable Power-Good RESET Delay Timer (DELAY)
        1. 7.3.2.1 Setting the Adjustable Power-Good Reset Delay
      3. 7.3.3 Undervoltage Lockout
      4. 7.3.4 Current Limit
      5. 7.3.5 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input and Output Capacitor Selection
        1. 8.1.1.1 Legacy Chip Capacitor Selection
        2. 8.1.1.2 New Chip Capacitor Selection
          1. 8.1.1.2.1 Output Capacitor
          2. 8.1.1.2.2 Input Capacitor
      2. 8.1.2 Dropout Voltage
      3. 8.1.3 Reverse Current
      4. 8.1.4 Power Dissipation (PD)
        1. 8.1.4.1 Thermal Performance Versus Copper Area
        2. 8.1.4.2 Power Dissipation Versus Ambient Temperature
      5. 8.1.5 Estimating Junction Temperature
      6. 8.1.6 Setting the Adjustable Power-Good Reset Delay
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Capacitor
        2. 8.2.2.2 Output Capacitor
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Device Nomenclature
      2. 9.1.2 Development Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

8.1.2 Dropout Voltage

Dropout voltage (VDO) is defined as VIN – VOUT at the rated output current (IRATED), where the pass transistor is fully on. VIN is the input voltage, VOUT is the output voltage, and IRATED is the maximum IOUT listed in the Recommended Operating Conditions table. The pass transistor is in the ohmic or triode region of operation, and acts as a switch. Dropout voltage indirectly specifies a minimum input voltage greater than the nominal programmed output voltage where the output voltage is expected to stay in regulation. If the input voltage falls to less than the nominal output regulation, then the output voltage falls as well.

For a CMOS regulator, the dropout voltage is determined by the drain-source on-state resistance (RDS(ON)) of the pass transistor. Therefore, if the linear regulator operates at less than the rated current, the dropout voltage for that current scales accordingly. The following equation calculates the RDS(ON) of the device.

Equation 2. TLE4275-Q1