SLVS647J August   2006  – May 2025 TLE4275-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Diagrams
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Power-Good Reset (RESET)
      2. 7.3.2 Adjustable Power-Good RESET Delay Timer (DELAY)
        1. 7.3.2.1 Setting the Adjustable Power-Good Reset Delay
      3. 7.3.3 Undervoltage Lockout
      4. 7.3.4 Current Limit
      5. 7.3.5 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input and Output Capacitor Selection
        1. 8.1.1.1 Legacy Chip Capacitor Selection
        2. 8.1.1.2 New Chip Capacitor Selection
          1. 8.1.1.2.1 Output Capacitor
          2. 8.1.1.2.2 Input Capacitor
      2. 8.1.2 Dropout Voltage
      3. 8.1.3 Reverse Current
      4. 8.1.4 Power Dissipation (PD)
        1. 8.1.4.1 Thermal Performance Versus Copper Area
        2. 8.1.4.2 Power Dissipation Versus Ambient Temperature
      5. 8.1.5 Estimating Junction Temperature
      6. 8.1.6 Setting the Adjustable Power-Good Reset Delay
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Capacitor
        2. 8.2.2.2 Output Capacitor
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Device Nomenclature
      2. 9.1.2 Development Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.2 ESD Ratings

VALUE
(Legacy Chip)		 VALUE
(New chip)		 UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±6000 ±2000 V
Machine model (MM) ±400 ±500
Charged-device model (CDM), per AEC Q100-011 All pins N/A ±500
Corner pins  N/A ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordancewith the ANSI/ESDA/JEDEC JS-001 specification.